Formation of Ge(111) on Insulator by Ge epitaxy on Si(111)...

Thin Solid Films 2014 / 04 Vol. 557

Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Sawano, K., Hoshi, Y., Endo, S., Nagashima, T., Arimoto, K., Yamanaka, J., Nakagawa, K., Yamada, S., Hamaya, K., Miyao, M., Shiraki, Y.
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Volume:
557
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2013.10.074
Date:
April, 2014
File:
PDF, 685 KB
english, 2014
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