Highly n-doped, tensile-strained Ge grown on Si by...

Thin Solid Films 2014 / 04 Vol. 557

Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy

Nishida, Keisuke, Xu, Xuejun, Sawano, Kentarou, Maruizumi, Takuya, Shiraki, Yasuhiro
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Volume:
557
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2013.10.082
Date:
April, 2014
File:
PDF, 505 KB
english, 2014
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