Impact of negative bias temperature instability on the...

Microelectronics Reliability 2013 / 9 Vol. 53; Iss. 9-11

Impact of negative bias temperature instability on the single-event upset threshold of a 65nm SRAM cell

El Moukhtari, I., Pouget, V., Larue, C., Darracq, F., Lewis, D., Perdu, P.
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Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.07.129
Date:
September, 2013
File:
PDF, 1.25 MB
english, 2013
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