Influence of copper on the diffusion length of the minority...

Microelectronics Reliability 2013 / 9 Vol. 53; Iss. 9-11

Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO2

Kolkovsky, Vl., Lukat, K.
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Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.07.066
Date:
September, 2013
File:
PDF, 549 KB
english, 2013
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