Variations in junction capacitance and doping activation...

Microelectronics Reliability 2013 / 9 Vol. 53; Iss. 9-11

Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

de Santi, C., Meneghini, M., Carraro, S., Vaccari, S., Trivellin, N., Marconi, S., Marioli, M., Meneghesso, G., Zanoni, E.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.07.053
Date:
September, 2013
File:
PDF, 809 KB
english, 2013
Conversion to is in progress
Conversion to is failed