A novel partial-SOI LDMOSFET (>800V) with n-type...

Microelectronics Reliability 2014 / 03 Vol. 54; Iss. 3

A novel partial-SOI LDMOSFET (>800V) with n-type floating buried layer in substrate

Xia, Chao, Cheng, Xinhong, Wang, Zhongjian, Cao, Duo, Jia, Tingting, Zheng, Li, Yu, Yuehui, Shen, Dashen
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Volume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.10.021
Date:
March, 2014
File:
PDF, 1.61 MB
english, 2014
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