Atomic layer etching of Al2O3 using BCl3/Ar for the...

Microelectronic Engineering 2013 / 10 Vol. 110

Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III–V MOS devices

Min, K.S., Kang, S.H., Kim, J.K., Jhon, Y.I., Jhon, M.S., Yeom, G.Y.
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Volume:
110
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.03.170
Date:
October, 2013
File:
PDF, 595 KB
english, 2013
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