Gate-all-around buckled dual Si nanowire nMOSFETs on bulk...

Microelectronic Engineering 2013 / 10 Vol. 110

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

Najmzadeh, M., Tsuchiya, Y., Bouvet, D., Grabinski, W., Ionescu, A.M.
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Volume:
110
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.02.003
Date:
October, 2013
File:
PDF, 940 KB
english, 2013
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