Void formation over limiting current density and impurity...

Microelectronics Reliability 2013 / 12 Vol. 53; Iss. 12

Void formation over limiting current density and impurity analysis of TSV fabricated by constant-current pulse-reverse modulation

Lin, Nay, Miao, Jianmin, Dixit, Pradeep
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Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.04.003
Date:
December, 2013
File:
PDF, 4.86 MB
english, 2013
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