A comparative study on device degradation under a positive...

Microelectronics Reliability 2013 / 9 Vol. 53; Iss. 9-11

A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors

Jang, Hyun Jun, Lee, Seung Min, Yu, Chong Gun, Park, Jong Tae
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Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.07.005
Date:
September, 2013
File:
PDF, 987 KB
english, 2013
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