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Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model
Mukunda B. Das, Michael L. RoszakVolume:
28
Year:
1985
Language:
english
Pages:
9
DOI:
10.1016/0038-1101(85)90030-9
File:
PDF, 730 KB
english, 1985