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Volume 28; Issue 10
Main
Solid-State Electronics
Volume 28; Issue 10
Solid-State Electronics
Volume 28; Issue 10
1
An analytic model to estimate the avalanche breakdown voltage improvement for LDD devices
F.S. Lai
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 511 KB
Your tags:
english, 1985
2
Visible light emission from silicon MOSFETS
N.C. Das
,
W.S. Khokle
,
S.D. Mohanty
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 1.52 MB
Your tags:
english, 1985
3
An experimental study of backgating effects in GaAs MESFETs
Saptharishi Sriram
,
Mukunda B. Das
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 1023 KB
Your tags:
english, 1985
4
Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model
Mukunda B. Das
,
Michael L. Roszak
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 730 KB
Your tags:
english, 1985
5
The Bethe condition for thermionic emission near an absorbing boundary
F. Berz
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 540 KB
Your tags:
english, 1985
6
Temperature dependence of intergrain barriers in polycrystalline In-doped CdS films
M.V. Garcia-Cuenca
,
J.L. Morenza
,
J. Esteve
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 410 KB
Your tags:
english, 1985
7
Deep depleted SOI MOSFETs with back potential control: A numerical simulation
F. Balestra
,
J. Brini
,
P. Gentil
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 615 KB
Your tags:
english, 1985
8
Deep centers in neutron-transmutation-doped gallium arsenide
J. Garrido
,
J.L. Castaño
,
J. Piqueras
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 405 KB
Your tags:
english, 1985
9
High-speed integrated circuits based on InP-MISFETs with plasma SiO2 gate insulator
K.P. Pande
,
D. Gutierrez
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 316 KB
Your tags:
english, 1985
10
Correlation between most 1/f noise and CCD transfer inefficiency
L.K.J. Vandamme
,
R.G.M. Penning de Vries
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 700 KB
Your tags:
english, 1985
11
A simple method of calculating the minority-carrier current in heavily doped silicon
M. Kleefstra
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 414 KB
Your tags:
english, 1985
12
Experimental determination of short-channel MOSFET parameters
Chu Hao
,
B. Cabon-Till
,
S. Cristoloveanu
,
G. Ghibaudo
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 492 KB
Your tags:
english, 1985
13
Editorial—Software survey section
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 118 KB
Your tags:
english, 1985
14
The role of nonuniform dielectric permittivity in the determination of heterojunction band offsets by C–V profiling through isotype heterojunctions
Dubravko I. Babic
,
Herbert Kroemer
Journal:
Solid-State Electronics
Year:
1985
Language:
english
File:
PDF, 264 KB
Your tags:
english, 1985
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