The effects of heavy doping on I–V characteristics of GaAs...

Solid-State Electronics 1986 Vol. 29; Iss. 7

The effects of heavy doping on I–V characteristics of GaAs JFET and MESFET devices

K.W. Teng, S.S. Li
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Volume:
29
Year:
1986
Language:
english
Pages:
4
DOI:
10.1016/0038-1101(86)90152-8
File:
PDF, 344 KB
english, 1986
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