Volume 29; Issue 7

Solid-State Electronics

Volume 29; Issue 7
1

The effects of heavy doping on I–V characteristics of GaAs JFET and MESFET devices

Year:
1986
Language:
english
File:
PDF, 344 KB
english, 1986
2

Equal areas rules for filamentation in SNDC elements

Year:
1986
Language:
english
File:
PDF, 808 KB
english, 1986
3

Potential probing of a thyristor cross-cut during turn-on

Year:
1986
Language:
english
File:
PDF, 628 KB
english, 1986
4

Near-surface effects of gold in silicon

Year:
1986
Language:
english
File:
PDF, 447 KB
english, 1986
5

On the effects of implantation of ions in the MeV energy range into silicon

Year:
1986
Language:
english
File:
PDF, 460 KB
english, 1986
6

Distribution of 1/ƒ noise in an epitaxial GaAs MESFET

Year:
1986
Language:
english
File:
PDF, 493 KB
english, 1986
7

Editorial — Software survey section

Year:
1986
Language:
english
File:
PDF, 112 KB
english, 1986
8

Optically controlled characteristics in an ion-implanted silicon MESFET

Year:
1986
Language:
english
File:
PDF, 390 KB
english, 1986
9

Modelling the d.c. performance of GaAs homojunction bipolar transistors

Year:
1986
Language:
english
File:
PDF, 889 KB
english, 1986
11

An isolated Al-poly Si-(p)Si-(n+)Si switching device

Year:
1986
Language:
english
File:
PDF, 255 KB
english, 1986
12

Optically induced inversion in the MIS solar cell

Year:
1986
Language:
english
File:
PDF, 653 KB
english, 1986