Analysis of MOSFET degradation due to hot-electron stress...

Solid-State Electronics 1988 Vol. 31; Iss. 11

Analysis of MOSFET degradation due to hot-electron stress in terms of interface-state and fixed-charge generation

Sunil Shabde, Anjan Bhattacharyya, Ron S. Kao, Richard S. Muller
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Volume:
31
Year:
1988
Language:
english
Pages:
8
DOI:
10.1016/0038-1101(88)90007-x
File:
PDF, 725 KB
english, 1988
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