Volume 31; Issue 11

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Solid-State Electronics
Volume 31; Issue 11

Solid-State Electronics

Volume 31; Issue 11

1

A simple C-V method to extract the correct equivalent box and the Gaussian representations of the channel-doping profile and the flat-band voltage of BC-MOSFETs

S. Karmalkar, K.N. Bhat

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 504 KB

english, 1988

2

Parameter extraction method for inhomogeneous MOSFETs locally damaged by hot carrier injection

Hisham S. Haddara, Sorin Cristoloveanu

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 814 KB

english, 1988

3

Determination of the mobility profile in silicon-on-sapphire material using the “fat” FET principle

A. Söderbärg, M. Rosling, H. Norde, P.A. Tove

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 303 KB

english, 1988

4

Analysis of charge-collection efficiency measurements in Schottky diodes

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 742 KB

english, 1988

5

Characterization of reverse recovery transient behavior of bipolar transistors for emitter parameters determination

J.J. Liou, H.K. Brown, M.S. Clamme

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 572 KB

english, 1988

6

Analysis of MOSFET degradation due to hot-electron stress in terms of interface-state and fixed-charge generation

Sunil Shabde, Anjan Bhattacharyya, Ron S. Kao, Richard S. Muller

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 725 KB

english, 1988

7

A generalized algorithm for CMOS circuit delay, power, and area optimization

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 818 KB

english, 1988

8

AuGeNi ohmic contacts to n-InP for FET applications

Jesús A. Del Alamo, Takashi Mizutani

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 498 KB

english, 1988

9

A novel low resistive Metal-Insulator-Semiconductor (MIS) inversion layer solar cell structure

P. Chattopadhyay

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 283 KB

english, 1988

10

Silicon bipolar transistors with negative and positive current gain temperature dependence and output conductance on the same monolithic chip

François Hébert, David J. Roulston

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 286 KB

english, 1988

11

Impurity redistribution during sublimation in UHV

R. Oven, D.G. Ashworth, S. Al-Rawi

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 220 KB

english, 1988

12

Editorial - software survey section

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 115 KB

english, 1988

13

Tradeoff between cutoff frequency and breakdown voltage for power MOSFETs

Masafumi Miyamoto, Takeaki Okabe

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 308 KB

english, 1988

14

Numerical study of an AlGaAs/GaAs heterostructure bipolar transistor: Emitter design and compositional grading

M. Meyyappan, G. Andrews, H.L. Grubin

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 698 KB

english, 1988

15

A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers

R.L. Van Meirhaeghe, L.M.O. Van den Berghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 645 KB

english, 1988

16

Effect of reactive ion etching on the electrical characteristics of poly-emitter bipolar transistors

D. Misra, C.R. Selvakumar, E.L. Heasell, D.J. Roulston

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 287 KB

english, 1988

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