Device-related material properties of heavily doped gallium arsenide
M.S. Lundstrom, M.E. Klausmeier-Brown, M.R. Melloch, R.K. Ahrenkiel, B.M. KeyesVolume:
33
Year:
1990
Language:
english
Pages:
12
DOI:
10.1016/0038-1101(90)90182-e
File:
PDF, 1.02 MB
english, 1990