Volume 33; Issue 6

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Solid-State Electronics
Volume 33; Issue 6

Solid-State Electronics

Volume 33; Issue 6

1

Foreword

Constantin Bulucea

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 67 KB

english, 1990

2

The use of simulation in semiconductor technology development

D.C. Cole, E.M. Buturla, S.S. Furkay, K. Varahramyan, J. Slinkman, J.A. Mandelman, D.P. Foty, O. Bula, A.W. Strong, J.W. Park, T.D. Linton Jr, J.B. Johnson, M.V. Fischetti, S.E. Laux, P.E. Cottrell, H

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 6.14 MB

english, 1990

3

Characterization and modeling of materials for photolithographic simulation

C.A. Spence, R.A. Ferguson, A.R. Neureuther, W.G. Oldham

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.15 MB

english, 1990

4

Range of high energy phosphorus and medium energy boron ions implanted in polymers

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 368 KB

english, 1990

5

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Changhae Park, Kevin M. Klein, Al F. Tasch

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 485 KB

english, 1990

6

Comparison of phosphorus, arsenic and boron implants into bulk silicon and SOS

Kostas Amberiadis, Michael R. Kump, Charles W. Magee

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 300 KB

english, 1990

7

Range distributions of ion implanted boron, phosphorus and arsenic dopants in thermally reacted titanium silicide thin films

G.M. Crean, P.D. Cole, C. Jeynes

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 276 KB

english, 1990

8

High temperature millisecond annealing of arsenic implanted silicon

J.L. Altrip, A.G.R. Evans, J.R. Logan, C. Jeynes

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 482 KB

english, 1990

9

Modeling co-implanted silicon and beryllium in gallium arsenide

Michael D. Deal, Heyward G. Robinson

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 829 KB

english, 1990

10

Physics for numerical simulation of silicon and gallium arsenide transistors

Herbert S. Bennett, Jeremiah R. Lowney

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.52 MB

english, 1990

11

Device-related material properties of heavily doped gallium arsenide

M.S. Lundstrom, M.E. Klausmeier-Brown, M.R. Melloch, R.K. Ahrenkiel, B.M. Keyes

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.02 MB

english, 1990

12

Impact ionization in silicon: A review and update

W. Maes, K. De Meyer, R. Van Overstraeten

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.08 MB

english, 1990

13

Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulation

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 613 KB

english, 1990

14

Minority carrier mobility model for device simulation

Naoyuki Shigyo, Hiroyoshi Tanimoto, Masayuki Norishima, Seiji Yasuda

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 441 KB

english, 1990

15

Interface recombination velocity and lifetime in GaAs and AlGaAs/GaAs structures

J.M. Borrego, S.K. Ghandhi

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 315 KB

english, 1990

16

Dielectric characterisation of semiconductors

Andrew K. Jonscher

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 428 KB

english, 1990

17

Novel hall effect spectroscopy of impurity levels in semiconductors

Bendik Kleveland, Sorin Cristoloveanu, Jean Sicart

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 711 KB

english, 1990

18

Study of thin oxide tunnel parameters for polysilicon emitters, using computer simulation and experimental results

D.J. Roulston, D.P. Gold, P. Ashburn, G.R. Booker

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 259 KB

english, 1990

19

Physical parameter extraction by inverse device modelling: Application to one- and two-dimensional doping profiling

G.J.L. Ouwerling

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 1.15 MB

english, 1990

20

Optimization of the spreading resistance profiling technique for submicron structures

H.L. Berkowitz, D.M. Burnell, R.J. Hillard, R.G. Mazur, P. Rai-Choudhury

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 560 KB

english, 1990

21

Extraction of semiconductor dopant profiles from spreading resistance data: An inverse problem

S.C. Choo, M.S. Leong, Chandra B.T. Liem, K.C. Kong

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 617 KB

english, 1990

22

Editorial — Software survey section

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 81 KB

english, 1990