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Breakdown characteristics of emitter-base and collector-base junctions of silicon bipolar junction transistors
Sheng-Lyang Jang, Kuang-Lang ChernVolume:
35
Year:
1992
Language:
english
Pages:
8
DOI:
10.1016/0038-1101(92)90026-9
File:
PDF, 451 KB
english, 1992