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Volume 35; Issue 5
Main
Solid-State Electronics
Volume 35; Issue 5
Solid-State Electronics
Volume 35; Issue 5
1
Experimental studies on the NDR of Si1−xGex/Si triple barrier resonant tunneling diodes
D.X. Xu
,
G.D. Shen
,
M. Willander
,
F. Schäffler
,
J.F. Luy
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 295 KB
Your tags:
english, 1992
2
Breakdown characteristics of emitter-base and collector-base junctions of silicon bipolar junction transistors
Sheng-Lyang Jang
,
Kuang-Lang Chern
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 451 KB
Your tags:
english, 1992
3
Negative differential conduction (NDC) in n+-v-p+-v-n+ AlGaAs/GaAs heterojunction devices
H.C. Tseng
,
Sheng S. Li
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 855 KB
Your tags:
english, 1992
4
A poly-emitter BJT Gummel-Poon model for pull-up transient analysis of a BiCMOS inverter
J.B. Kuo
,
C.C. Chang
,
T.C. Lu
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 295 KB
Your tags:
english, 1992
5
A δ-doped GaAs/In0.37Ga0.63As/GaAs high electron mobility transistor prepared by low-pressure metalorganic chemical vapor deposition
W.C. Hsu
,
H.M. Shieh
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 240 KB
Your tags:
english, 1992
6
Modified simple expression for bandgap narrowing in n-type GaAs
S.C. Jain
,
J.M. McGregor
,
D.J. Roulston
,
P. Balk
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 317 KB
Your tags:
english, 1992
7
Influence of drain bias voltage on determining the effective channel length and series resistance of drain-engineered MOSFETs below saturation
S.L. Chen
,
Jeng Gong
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 441 KB
Your tags:
english, 1992
8
Modeling the non-uniformity of base sheet resistivity at high currents in bipolar transistors
S. Decoutere
,
L. Deferm
,
C. Claeys
,
G. Declerck
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 170 KB
Your tags:
english, 1992
9
New analytical polycrystalline-silicon thin-film transistor model for computer aided design and parameter extraction
Young Hee Byun
,
Michael Shur
,
Michael Hack
,
Kwyro Lee
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 653 KB
Your tags:
english, 1992
10
Maximally flat transmission windows in finite superlattices
O. Vanbesien
,
H. Leroux
,
D. Lippens
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 401 KB
Your tags:
english, 1992
11
Steady-states in a cooled p-Ge photoconductor via the Landsberg-Schöll-Shukla model
Konstantin Nikolić
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 314 KB
Your tags:
english, 1992
12
Self-heating in BJT circuit parameter extraction
Michael Reisch
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 224 KB
Your tags:
english, 1992
13
A 2000 V non-punchthrough IGBT with high ruggedness
T. Laska
,
G. Miller
,
J. Niedermeyr
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 314 KB
Your tags:
english, 1992
14
Analytical d.c. and small-signal a.c. modeling of Si delta(δ)-doped field effect transistors
Q. Chen
,
M. Willander
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 470 KB
Your tags:
english, 1992
15
Ehrenfest derivation of forces acting within semiconductors of inhomogeneous material composition
Y.L. Le Coz
,
H.F. Tiersten
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 321 KB
Your tags:
english, 1992
16
Influence of majority carrier bandtails on the performance of semiconductor devices
P. Van Mieghem
,
S. Decoutere
,
G. Borghs
,
R. Mertens
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 419 KB
Your tags:
english, 1992
17
Physical model for characterizing and simulating a FLOTOX EEPROM device
Ching-Yuan Wu
,
Chiou-Feng Chen
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 830 KB
Your tags:
english, 1992
18
Triggering and sustaining of snapback in MOSFETs
Tomasz Skotnicki
,
Gérard Merckel
,
Christian Denat
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 397 KB
Your tags:
english, 1992
19
Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures
J.S. Wu
,
C.P. Lee
,
C.Y. Chang
,
K.H. Chang
,
D.G. Liu
,
D.C. Liou
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 1.70 MB
Your tags:
english, 1992
20
Thermal excitation rates and capture cross sections associated with deep impurities in semiconductors
M.A. Amato
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 238 KB
Your tags:
english, 1992
21
On the design of doping concentration profiles for GaAs transferred-electron device layers
A.R. Batchelor
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 494 KB
Your tags:
english, 1992
22
On the relative advantages of modelling semiconductors using a non-isothermal analysis
A.R. Batchelor
,
R.E. Miles
,
M.J. Howes
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 188 KB
Your tags:
english, 1992
23
Highly forward-biased FET gates and their experimental current and voltage distributions
William H. Haydl
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 137 KB
Your tags:
english, 1992
24
Direct observation of intermediate levels in multistep burst noise
K.F. Knott
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 80 KB
Your tags:
english, 1992
25
Editorial: Software survey section
Journal:
Solid-State Electronics
Year:
1992
Language:
english
File:
PDF, 75 KB
Your tags:
english, 1992
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