Dependence of the activity efficiency of Mg-implanted into...

Solid-State Electronics 1994 Vol. 37; Iss. 1

Dependence of the activity efficiency of Mg-implanted into GaAs on the concentration of As doped into a-Si:H encapsulants

Katsuhiro Yokota, Masanori Sakaguchi, Hiroki Inohara, Hiromi Nakanishi, Susumu Tamura, Yuuji Horino, Akiyoshi Chayahara, Mamoru Satho, Kiyohito Hirai, Hiromichi Takano, Mashao Kumagaya
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Volume:
37
Year:
1994
Language:
english
Pages:
7
DOI:
10.1016/0038-1101(94)90097-3
File:
PDF, 653 KB
english, 1994
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