Volume 37; Issue 1

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Solid-State Electronics
Volume 37; Issue 1

Solid-State Electronics

Volume 37; Issue 1

1

Editorial Board

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 73 KB

english, 1994

2

Publisher's note

Journal:

Solid-State Electronics

Year:

1994

File:

PDF, 12 KB

1994

3

A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan

V.K.S. Ong, J.C.H. Phang, D.S.H. Chan

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 506 KB

english, 1994

4

Dependence of the activity efficiency of Mg-implanted into GaAs on the concentration of As doped into a-Si:H encapsulants

Katsuhiro Yokota, Masanori Sakaguchi, Hiroki Inohara, Hiromi Nakanishi, Susumu Tamura, Yuuji Horino, Akiyoshi Chayahara, Mamoru Satho, Kiyohito Hirai, Hiromichi Takano, Mashao Kumagaya

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 653 KB

english, 1994

5

CMOS on-chip electrostatic discharge protection circuit using four-SCR structures with low ESD-trigger voltage

Ming-Dou Ker, Chung-Yu Wu

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 940 KB

english, 1994

6

An efficient and accurate self-consistent calculation of electronic states in modulation doped heterostructures

Ali Abou-Elnour, Klaus Schuenemann

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 300 KB

english, 1994

7

A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure

Mingzhen Xu, Changhua Tan, Yandong He, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 359 KB

english, 1994

8

Ohmic contacts of Au and Ag to p-GaSb

A.G. Milnes, M. Ye, M. Stam

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 631 KB

english, 1994

9

Fowler-Nordheim tunnelling current in an Mg/SiO2/Si MOS structure

On Kong Sik, Yee Kwok Chee

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 395 KB

english, 1994

10

A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs

Kuo-Wei Liu, A.F.M. Anwar

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 227 KB

english, 1994

11

Resistivity profile measurements of proton-irradiated n-type silicon

Niclas Keskitalo, Anders Hallén

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 530 KB

english, 1994

12

A comparison of some approximations for the Fermi-Dirac integral of order 12

Stephen A. Wong, Sean P. McAlister, Zhan-Ming Li

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 229 KB

english, 1994

13

Study of tantalum-based diffusion barriers between Al and Si

Wen-Chun Wang, Tzong-Sheng Chang, Fon-Shan Huang

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 438 KB

english, 1994

14

Temperature dependence of forward current-voltage characteristics in a GaAs PiN structure with near-fully compensated i-region under low and high injection conditions

G. Ashkinazi, B. Meyler, M. Nathan, L. Zolotarevski, O. Zolotarevski

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 410 KB

english, 1994

15

Comparison of gate-edge effects on the hot-carrier induced degradation of LDD N- and P-channel MOSFETs

Y. Pan, K.K. Ng, V. Kwong

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 448 KB

english, 1994

16

Analytical model of the effective recombination velocity of diffused p−p+ (n−n+) high-low junctions at arbitrary injection level

Salvatore Bellone, Giovannella Lirer

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 628 KB

english, 1994

17

Novel characteristics of the polysilicon high-low-emitter (PHL-emitter) bipolar transistor—High current gain and zero activation energy

Kun-Zen Chang, Ching-Yuan Wu

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 315 KB

english, 1994

18

Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°C

Cheng-Liang Huang, Narain D. Arora

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 508 KB

english, 1994

19

Charge-control and mobility in Si delta-doped FETs grown by MBE

Q. Chen, N. Zou, M. Willander

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 386 KB

english, 1994

20

On the universal electric field dependence of the electron and hole effective mobility in MOS inversion layers

A. Emrani, G. Ghibaudo, F. Balestra

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 222 KB

english, 1994

21

Effect of RPT/furnace processing on the minority carrier lifetime in very thin oxide MOS capacitors

L. Fonseca, F. Campabadal

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 199 KB

english, 1994

22

The effect of strain on the base resistance and transit time of ungraded and compositional-graded SiGe HBTs

D. Rosenfeld, S.A. Alterovitz

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 567 KB

english, 1994

23

Accurate simulation of fast ion irradiated power devices

P. Hazdra, J. Vobecký

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 683 KB

english, 1994

24

A new intermediate state model for the GTO: Relation to the turn-off process

Z. Gribnikov, A. Rothwarf

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 374 KB

english, 1994

25

Analytic expressions for the field dependent tunnelling attenuation factor in thin insulators

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 375 KB

english, 1994

26

Current switching and instability in a heterostructure hot electron diode

A. Reklaitis, G. Mykolaitis

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 321 KB

english, 1994

27

A simple trap-detrap model for accurate prediction of radiation induced threshold voltage shifts in radiation tolerant oxides for all static or time variant oxide fields

Derek Kimpton, John Kerr

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 521 KB

english, 1994

28

Effect of thickness and granular structure on the electrical conductivity of the active layer in polycrystalline silicon TFTs

H. Sehil, H. Lhermite, F. Raoult, Y. Colin

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 730 KB

english, 1994

29

A novel fabrication process and analytical model for Pt/GaAs Schottky barrier mixer diodes

V. Krozer, A. Grüb

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 885 KB

english, 1994

30

Generalized piezoelectric scattering rate for electrons in a two-dimensional electron gas

Michael A. Stroscio, K.W. Kim

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 109 KB

english, 1994

31

Determination of the fitting parameters for using uniform emitter and base doping profile in bipolar transistor modeling

J.J. Liou, C.S. Ho, A. Kager

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 193 KB

english, 1994

32

Calculation of avalanche breakdown voltage of the InP P+-N junction

Tae-Hun Moon, Yearn-Ik Choi, Sang-Koo Chung

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 92 KB

english, 1994

33

Fowler-Nordheim tunnelling current in a yttrium/silicon dioxide/silicon MOS structure

Sik On Kong, Chee Yee Kwok

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 266 KB

english, 1994

34

On the dependence of cut-off frequency of a Schottky diode on epilayer doping

S. Mukhopadhyay, A.N. Daw

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 142 KB

english, 1994

35

Properties of Au-Ge ohmic contacts after the alloying process

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 210 KB

english, 1994

36

A new experimental method (E-plot) to characterize the substrate-current and the saturation-voltage of fresh and hot-electron-damaged NMOSFETs

Shi-Ho Kim, Kyeong-Sik Min, Kwyro Lee

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 177 KB

english, 1994

37

Collector-emitter offset voltage in InP/InGaAs single and double heterojunction bipolar transistors

A. Ouacha, M. Willander, B. Hammarlund, R.A. Logan

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 213 KB

english, 1994

38

Subthreshold characteristics of a SiGe-channel PMOS device operating at 77 K

J.B. Kuo, J.H. Sim

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 141 KB

english, 1994

39

Transconductance compression near subthreshold of GaAs floated electron channel field effect transistor

Y.J. Lee, C.T. Kim, S.C. Hong, Y.S. Kwon

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 281 KB

english, 1994

40

Monte-Carlo simulation of gate leakage current effect in P-channel GaAs/Al0.7Ga0.3As HIGFET

V. Pankratov, V. Ryzhii

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 148 KB

english, 1994

41

AlGaAs/GaAs HBT collector optimization for high frequency performance

G. Khrenov, V. Ryzhii, S. Kartashov

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 144 KB

english, 1994

42

Annealing of gamma-irradiated Al-gate NMOS transistors

M. Pejović, S. Golubović, G. Ristić, M. Odalović

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 165 KB

english, 1994

43

The double sweep HF-CV technique for generation lifetime determination in MOS capacitors

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 177 KB

english, 1994

44

A contribution to the optimization of front-contact grid patterns for solar cells

P. Nubile, N. Veissid

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 190 KB

english, 1994

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