Noise and gain comparison of 0.25 μm gate MESFETs and...

Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits

D. Scherrer, P. Apostolakis, J. Middleton, P.J. Mares, J. Kruse, M. Feng
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Volume:
39
Year:
1996
Language:
english
Pages:
7
DOI:
10.1016/0038-1101(95)00170-0
File:
PDF, 646 KB
english, 1996
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