Volume 39; Issue 4

Main
Solid-State Electronics
Volume 39; Issue 4

Solid-State Electronics

Volume 39; Issue 4

1

Process control of rapid thermal N2O-annealed thin gate oxides

Yi-Zen Huang, Wei-Shin Lu, Jenn-Gwo Hwu

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 385 KB

english, 1996

2

Surface thermoplasma waves and their interaction with flow of charged particles at a semiconductor-metal interface

V.L. Falko, S.I. Khankina, V.M. Yakovenko

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

3

Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures

D. Bauza, G. Ghibaudo

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 637 KB

english, 1996

4

Barrier characteristics of PtSip-Si Schottky diodes as determined from I-V-T measurements

P.G. McCafferty, A. Sellai, P. Dawson, H. Elabd

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 890 KB

english, 1996

5

Advanced materials for low power electronics

P.K. Vasudev, M. Mendicino, T.E. Seidel

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 765 KB

english, 1996

6

CMOS device and interconnect technology enhancements for low power/low voltage applications

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 695 KB

english, 1996

7

Si/SiGe HBTs for application in low power ICs

D. Behammer, J.N. Albers, U. König, D. Temmler, D. Knoll

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 810 KB

english, 1996

8

Complementary heterostructure FET technology for low power, high speed digital applications

David E. Fulkerson, Steven Baier, James Nohava, Rod Hochhalter

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 654 KB

english, 1996

9

Modelling and application of fully depleted SOI MOSFETs for low voltage, low power analogue CMOS circuits

D. Flandre, L.F. Ferreira, P.G.A. Jespers, J.-P. Colinge

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 508 KB

english, 1996

10

Scaling behavior of sub-micron MOSFETs on fully depleted SOI

Neal Kistler, Jason Woo

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 780 KB

english, 1996

11

Low-current operation of high-speed InP/InGaAs heterojunction bipolar transistors

Hiroki Nakajima, Kenji Kurishima, Shoji Yamahata, Takashi Kobayashi, Yutaka Matsuoka

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 475 KB

english, 1996

12

Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits

D. Scherrer, P. Apostolakis, J. Middleton, P.J. Mares, J. Kruse, M. Feng

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 646 KB

english, 1996

13

On the lower bounds of CMOS supply voltage

Gerhard Schrom, Christoph Pichler, Thomas Simlinger, Siegfried Selberherr

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 570 KB

english, 1996

14

Analysis of quantum wire high electron mobility transistor (HEMT) structure

S.K. Islam, F.C. Jain

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 400 KB

english, 1996

15

Numerical modelling of abrupt InP/InGaAs HBTs

Juan M. López-González, Lluis Prat

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 412 KB

english, 1996

16

A resurfed high-voltage NMOS device fully compatible with a low-voltage 0.8 μm BiCMOS technology

Yong Qiang Li, C.Andre T. Salama, Mike Seufert, Peter Schvan, Mike King

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 448 KB

english, 1996

17

125–145 GHz stable depletion layer transferred electron oscillators

M.F. Zybura, S.H. Jones, B.W. Lim, J.D. Crowley, J.E. Carlstrom

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 471 KB

english, 1996

18

Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors

Jongoh Kim, Byounguk Ihn, Bumman Kim, Kwangil Lee, Wonoh Lee, Seounghwan Lee

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 395 KB

english, 1996

19

Physical models of ohmic contact for Monte Carlo device simulation

Tomás González, Daniel Pardo

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 680 KB

english, 1996

20

Substrate crosstalk in BiCMOS mixed mode integrated circuits

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 475 KB

english, 1996

21

GaAs surface chemical passivation by (NH4)2S+Se and the effect of annealing treatments

S. Belkouch, C. Aktik, H. Xu, E.L. Ameziane

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 309 KB

english, 1996

22

Optimization of PP− junction termination for new power devices

P. Austin, J.L. Sanchez, R. Berriane

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 529 KB

english, 1996

23

Monte Carlo simulation of real and reciprocal space transfer of electrons in a pseudomorphically strained GaAs/In0.15Ga0.85As/GaAs quantum well

D. Hoare, R.A. Abram, R.W. Kelsall

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 704 KB

english, 1996

24

Advanced manufacturing of SIMOX for low power electronics

Michael Alles, Wade Krull

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 553 KB

english, 1996

25

Conformal mapping techniques for the analytical, two-dimensional calculation of currents in lateral bipolar transistor structures

D. Freund, A Klös, A. Kostka

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 863 KB

english, 1996

26

Foreword

Bahram Jalali, Zachary Lemnios

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 37 KB

english, 1996

27

Depletion layer resistance and its effect on I-V characteristics of fully- and partially-illuminated silicon solar cells

K. Chakrabarty, S.N. Singh

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 423 KB

english, 1996

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски