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A resurfed high-voltage NMOS device fully compatible with a low-voltage 0.8 μm BiCMOS technology
Yong Qiang Li, C.Andre T. Salama, Mike Seufert, Peter Schvan, Mike KingVolume:
39
Year:
1996
Language:
english
Pages:
6
DOI:
10.1016/0038-1101(95)00181-6
File:
PDF, 448 KB
english, 1996