Characterization of in-depth cavity distribution after...

Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride

Fodor, B., Cayrel, F., Agocs, E., Alquier, D., Fried, M., Petrik, P.
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Volume:
571
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2014.02.014
Date:
November, 2014
File:
PDF, 1.02 MB
english, 2014
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