Mobility modeling of SOI MOSFETs in the high temperature...

Solid-State Electronics 1996 Vol. 39; Iss. 9

Mobility modeling of SOI MOSFETs in the high temperature range

G. Reichert, T. Ouisse, J.L. Pelloie, S. Cristoloveanu
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Volume:
39
Year:
1996
Language:
english
Pages:
6
DOI:
10.1016/0038-1101(96)00034-2
File:
PDF, 594 KB
english, 1996
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