Volume 39; Issue 9

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Solid-State Electronics
Volume 39; Issue 9

Solid-State Electronics

Volume 39; Issue 9

1

Characteristics of bulk-barrier switching devices with InGaAsGaAs delta-doped quantum wells

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 446 KB

english, 1996

2

Modeling of a MOSFET's parasitic resistance's narrow width and body bias effects for an IC simulator

Kai Chen, Yuhua Cheng, Chenming Hu, Z.H. Liu, Min-Chie Jeng, Ko K. Ping

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 260 KB

english, 1996

3

Methodology of abrupt heterostructures: band diagram calculations

L. Djaloshinski, Y. Nemirovsky

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 546 KB

english, 1996

4

Depletion approximation in semiconductor trap filling analysis: Application to EL2 in GaAs

D.C. Look, Z.-Q. Fang, J.R. Sizelove

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 320 KB

english, 1996

5

Separation of d.c. and a.c. competing effect of polysilicon-gate depletion in deep submicron CMOS circuit performance

Wallace W. Lin, Chunlin Liang

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 219 KB

english, 1996

6

Modeling of saturation transconductance for short-channel MOSFETs

H. Wong, K.F. Man, M.C. Poon

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 336 KB

english, 1996

7

Modeling narrow-channel effect in VLSI mesa-isolated SOI MOS devices using a quasi-two-dimensional approach

K.W. Su, J.B. Kuo

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 803 KB

english, 1996

8

A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors

G.A. Armstrong, S.D. Brotherton, J.R. Ayres

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 948 KB

english, 1996

9

Radiation hard blocked tunneling band GaAsAlGaAs superlattice long wavelength infrared detectors

C.S. Wu, C.P. Wen, P. Reiner, C.W. Tu, H.Q. Hou

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 1.13 MB

english, 1996

10

VPE grown ZnSeSi PIN-like visible photodiodes

Wen-Shiung Lour, Chung-Cheng Chang

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 537 KB

english, 1996

11

Mobility modeling of SOI MOSFETs in the high temperature range

G. Reichert, T. Ouisse, J.L. Pelloie, S. Cristoloveanu

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 594 KB

english, 1996

12

A relationship between interface trap density and transconductance in 6HSiC enhancement mode field-effect transistors

M.W. Dryfuse, M. Tabib-Azar

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 506 KB

english, 1996

13

Comparison of different analytical descriptions of the temperature dependence of the indirect energy gap in silicon

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 938 KB

english, 1996

14

High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

J. Fernández, P. Godignon, S. Berberich, J. Rebollo, G. Brezeanu, J. Millán

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 536 KB

english, 1996

15

Use of the charge pumping technique with a sinusoidal gate waveform

J.L. Autran, C. Chabrerie

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 181 KB

english, 1996

16

A nondestructive method for measuring the photoelectric parameters of wafers with p-n junctions

O.G. Koshelev, V.A. Morozova

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 438 KB

english, 1996

17

Negative VBE shift due to base dopant outdiffusion in DHBT

M. Borgarino, F. Paorici, F. Fantini

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 433 KB

english, 1996

18

High performance InPInGaAs-BASED MSM photodetector operating at 1.3-1.5 μm

K.C. Song, M.A. Matin, B. Robinson, J.G. Simmons, D.A. Thompson, P. Mascher

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 487 KB

english, 1996

19

An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions

Y. Yue, J.J. Liou, I. Batarseh

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 571 KB

english, 1996

20

Electrical transport in p-GaN, n-InN and n-InGaN

Wim Geerts, J.D. Mackenzie, C.R. Abernathy, S.J. Pearton, Thomas Schmiedel

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 590 KB

english, 1996

21

Capacitance-voltage hysteresis of an electrolyte-GaAs Schottky contact associated with field-enhanced trapping of hot electrons

Akiyasu Yamashita

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 710 KB

english, 1996

22

Effects of the screening and mirror charges on electron mobility in the subthreshold region of Si MOSFETs

Y. Ohkura, S. Kimura, S. Ihara

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 665 KB

english, 1996

23

A new analytical model for determination of breakdown voltage of Resurf structures

Dejan Kriz̆aj, Georges Charitat, Slavko Amon

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 615 KB

english, 1996

24

Transient substrate current in the SOI-LIGBT

Hitoshi Sumida, Atsuo Hirabayashi, Saburou Tagami

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 435 KB

english, 1996

25

A novel UMOS capacitor test structure for SiC devices

C.-M. Zetterling, M. Östling

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 237 KB

english, 1996

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