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An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions
Y. Yue, J.J. Liou, I. BatarsehVolume:
39
Year:
1996
Language:
english
Pages:
6
DOI:
10.1016/0038-1101(96)00046-9
File:
PDF, 571 KB
english, 1996