In-situ etching of patterned GaAs/InGaP surfaces for highly...

Journal of Crystal Growth 2013 / 5 Vol. 370

In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975nm DFB-BA diode lasers

Maaßdorf, A., Schultz, C.M., Brox, O., Wenzel, H., Crump, P., Bugge, F., Mogilatenko, A., Erbert, G., Weyers, M., Tränkle, G.
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Volume:
370
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2012.08.012
Date:
May, 2013
File:
PDF, 524 KB
english, 2013
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