Epitaxial growth and anisotropic strain relaxation of...

Solid-State Electronics 2013 / 5 Vol. 83

Epitaxial growth and anisotropic strain relaxation of Ge1−xSnx layers on Ge(110) substrates

Asano, Takanori, Shimura, Yosuke, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki
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Volume:
83
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2013.01.039
Date:
May, 2013
File:
PDF, 1.06 MB
english, 2013
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