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Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE
Higashi, K., Hasegawa, S., Sano, S., Zhou, Y.K., Asahi, H.Volume:
378
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2012.12.112
Date:
September, 2013
File:
PDF, 695 KB
english, 2013