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The dependence of reverse characteristics of high voltage devices passivated by semi-insulating polycrystalline silicon on an interfacial thin film
Edmund P. Burte, Günter H. SchulzeVolume:
199
Year:
1991
Language:
english
Pages:
8
DOI:
10.1016/0040-6090(91)90049-4
File:
PDF, 372 KB
english, 1991