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Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon
T. Lohner, M. Fried, J. Gyulai, K. Vedam, N.V. Nguyen, L.J. Hanekamp, A. van SilfhoutVolume:
233
Year:
1993
Language:
english
Pages:
5
DOI:
10.1016/0040-6090(93)90071-v
File:
PDF, 355 KB
english, 1993