Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications
F.J. Clough, A.O. Brown, S.N.Ekkanath Madathil, W.I. MilneVolume:
270
Year:
1995
Language:
english
Pages:
5
DOI:
10.1016/0040-6090(95)06834-1
File:
PDF, 530 KB
english, 1995