0.10 μm TiSi2 technology utilizing nitrogen diffusion...

0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTA

Y. Matsubara, T. Sakai, T. Ishigami, K. Ando, T. Horiuchi
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Volume:
270
Year:
1995
Language:
english
Pages:
7
DOI:
10.1016/0040-6090(95)06838-4
File:
PDF, 904 KB
english, 1995
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