15days electron beam exposure for manufacturing of large...

Microelectronic Engineering 2013 / 10 Vol. 110

15days electron beam exposure for manufacturing of large area silicon based NIL master

Thrun, Xaver, Choi, Kang-Hoon, Freitag, Martin, Gutsch, Manuela, Hohle, Christoph, Paul, Jan, Rudolph, Matthias, Steidel, Katja
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Volume:
110
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.02.082
Date:
October, 2013
File:
PDF, 1.59 MB
english, 2013
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