UTBB SOI MOSFETs analog figures of merit: Effects of ground...

Solid-State Electronics 2013 / 12 Vol. 90

UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime

Md Arshad, M.K., Makovejev, S., Olsen, S., Andrieu, F., Raskin, J.-P., Flandre, D., Kilchytska, V.
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Volume:
90
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2013.02.051
Date:
December, 2013
File:
PDF, 1.45 MB
english, 2013
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