Volume 90

Solid-State Electronics

Volume 90

1

Characterization of heavily doped SOI wafers under pseudo-MOSFET configuration

Liu, F.Y., Diab, A., Ionica, I., Akarvardar, K., Hobbs, C., Ouisse, T., Mescot, X., Cristoloveanu, S.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 889 KB

english, 2013

2

Impact ionization induced dynamic floating body effect in junctionless transistors

Yu, R., Nazarov, A.N., Lysenko, V.S., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.39 MB

english, 2013

3

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

Lecavelier des Etangs-Levallois, A., Lesecq, M., Danneville, F., Tagro, Y., Lepilliet, S., Hoel, V., Troadec, D., Gloria, D., Raynaud, C., Dubois, E.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.79 MB

english, 2013

4

Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

Chang, Sung-Jae, Cheralathan, Muthupandian, Bawedin, Maryline, Iniguez, Benjamin, Bayraktaroglu, Burhan, Lee, Jong-Hyun, Lee, Jung-Hee, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.45 MB

english, 2013

5

Normally-off GaN MOSFETs on insulating substrate

Kim, Dong-Seok, Im, Ki-Sik, Kim, Ki-Won, Kang, Hee-Sung, Kim, Do-Kywn, Chang, Sung-Jae, Bae, Youngho, Hahm, Sung-Ho, Cristoloveanu, Sorin, Lee, Jung-Hee

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.43 MB

english, 2013

6

Revisited parameter extraction methodology for electrical characterization of junctionless transistors

Jeon, D.-Y., Park, S.J., Mouis, M., Berthomé, M., Barraud, S., Kim, G.-T., Ghibaudo, G.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

7

Bandstructure and mobility variations in p-type silicon nanowires under electrostatic gate field

Neophytou, Neophytos, Baumgartner, Oskar, Stanojevic, Zlatan, Kosina, Hans

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.32 MB

english, 2013

8

An analytical mobility model for square Gate-All-Around MOSFETs

Tienda-Luna, I.M., Roldán, J.B., Ruiz, F.G., Blanque, C.M., Gámiz, F.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 447 KB

english, 2013

9

Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region

Holtij, Thomas, Schwarz, Mike, Kloes, Alexander, Iñíguez, Benjamín

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 957 KB

english, 2013

10

A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors

Trevisoli, Renan Doria, Doria, Rodrigo Trevisoli, de Souza, Michelly, Pavanello, Marcelo Antonio

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 595 KB

english, 2013

11

DC and low frequency noise performances of SOI p-FinFETs at very low temperature

Achour, H., Talmat, R., Cretu, B., Routoure, J.-M., Benfdila, A., Carin, R., Collaert, N., Simoen, E., Mercha, A., Claey, C.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.79 MB

english, 2013

12

Editorial Board

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 62 KB

english, 2013

13

Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates

Doria, Rodrigo Trevisoli, Martino, João Antonio, Simoen, Eddy, Claeys, Cor, Pavanello, Marcelo Antonio

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 853 KB

english, 2013

14

On the extension of ET-FDSOI roadmap for 22nm node and beyond

Sampedro, C., Gámiz, F., Godoy, A.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 750 KB

english, 2013

15

Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM

Almeida, Luciano Mendes, Sasaki, Kátia Regina Akemi, Caillat, Christian, Aoulaiche, Marc, Collaert, Nadine, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor, Martino, João Antonio

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 948 KB

english, 2013

16

Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances

Ben Akkez, Imed, Fenouillet-Beranger, Claire, Cros, Antoine, Perreau, Pierre, Haendler, Sébatien, Weber, Olivier, Andrieu, François, Pellissier-Tanon, D., Abbate, F., Richard, C., Beneyton, R., Gourau

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.71 MB

english, 2013

17

Modeling of low frequency noise in FD SOI MOSFETs

El Husseini, J., Martinez, F., Valenza, M., Ritzenthaler, R., Lime, F., Iñiguez, B., Faynot, O., Le Royer, C., Andrieu, F.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 701 KB

english, 2013

18

Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET

Mohd Zain, Anis Suhaila, Markov, Stanislav, Cheng, Binjie, Asenov, Asen

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.06 MB

english, 2013

19

Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETs

Osintsev, Dmitri, Baumgartner, Oskar, Stanojevic, Zlatan, Sverdlov, Viktor, Selberherr, Siegfried

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 838 KB

english, 2013

20

Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up

Hraziia,, Makosiej, Adam, Palma, Giorgio, Portal, Jean-Michel, Bocquet, Marc, Thomas, Olivier, Clermidy, Fabien, Reyboz, Marina, Onkaraiah, Santhosh, Muller, Christophe, Deleruyelle, Damien, Vladimir

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.43 MB

english, 2013

21

A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

Diab, A., Fernández, C., Ohata, A., Rodriguez, N., Ionica, I., Bae, Y., Van Den Daele, W., Allibert, F., Gámiz, F., Ghibaudo, G., Mazure, C., Cristoloveanu, S.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.02 MB

english, 2013

22

Foreword

Bawedin, Maryline

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 140 KB

english, 2013

23

A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications

Wan, Jing, Royer, Cyrille Le, Zaslavsky, Alexander, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 3.45 MB

english, 2013

24

Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution

Nguyen, P., Andrieu, F., Cassé, M., Tabone, C., Perreau, P., Lafond, D., Dansas, H., Tosti, L., Veytizou, C., Landru, D., Kononchuk, O., Guiot, E., Nguyen, B.-Y., Faynot, O., Poiroux, T.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.24 MB

english, 2013

25

Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices

Agopian, Paula Ghedini Der, Bordallo, Caio Cesar Mendes, Simoen, Eddy, Claeys, Cor, Martino, João Antonio

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 536 KB

english, 2013

26

UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime

Md Arshad, M.K., Makovejev, S., Olsen, S., Andrieu, F., Raskin, J.-P., Flandre, D., Kilchytska, V.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.45 MB

english, 2013

27

Characterization and optimization of partially depleted SOI MOSFETs for high power RF switch applications

Im, Donggu, Lee, Kwyro

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.03 MB

english, 2013

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