Concentration of uncompensated impurities as a key...

Semiconductor Science and Technology 2012 / 01 Vol. 27; Iss. 1

Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x\ssty{/}γ-ray detectors

Kosyachenko, L A, Lambropoulos, C P, Aoki, T, Dieguez, E, Fiederle, M, Loukas, D, Sklyarchuk, O V, Maslyanchuk, O L, Grushko, E V, Sklyarchuk, V M, Crocco, J, Bensalah, H
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
27
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/27/1/015007
Date:
January, 2012
File:
PDF, 633 KB
english, 2012
Conversion to is in progress
Conversion to is failed