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Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy
Yamane, Keisuke, Hashimoto, Yasuhiro, Okada, Narihito, Tadatomo, KazuyukiVolume:
403
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2014.06.011
Date:
October, 2014
File:
PDF, 1.86 MB
english, 2014