Volume 403

Journal of Crystal Growth

Volume 403

1

Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy

Yamane, Keisuke, Hashimoto, Yasuhiro, Okada, Narihito, Tadatomo, Kazuyuki

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.86 MB

english, 2014

2

Development of GaN wafers via the ammonothermal method

Letts, Edward, Hashimoto, Tadao, Hoff, Sierra, Key, Daryl, Male, Keith, Michaels, Mathew

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 946 KB

english, 2014

3

Vacancy–hydrogen complexes in ammonothermal GaN

Tuomisto, F., Kuittinen, T., Zając, M., Doradziński, R., Wasik, D.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 960 KB

english, 2014

4

Optical and magnetic resonance studies of Be-doped GaN bulk crystals

Glaser, E.R., Freitas, J.A., Storm, D.F., Teisseyre, Henryk, Boćkowski, Michal

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 820 KB

english, 2014

5

DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture

Kempisty, Pawel, Strak, Pawel, Sakowski, Konrad, Krukowski, Stanislaw

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 311 KB

english, 2014

6

Novel alkali metal amidogallates as intermediates in ammonothermal GaN crystal growth

Zhang, Shiyu, Alt, Nicolas S.A., Schlücker, Eberhard, Niewa, Rainer

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.31 MB

english, 2014

7

Bulk properties of InN films determined by experiments and theory

Kumar, M., Baldissera, G., Persson, C., David, D.G.F., da Silva, M.V.S., Freitas, J.A., Tischler, J.G., Chubaci, J.F.D., Matsuoka, M., Ferreira da Silva, A.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 582 KB

english, 2014

8

Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique

Edgar, J.H., Hoffman, T.B., Clubine, B., Currie, M., Du, X.Z., Lin, J.Y., Jiang, H.X.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 895 KB

english, 2014

9

HVPE-GaN growth on misoriented ammonothermal GaN seeds

Sochacki, T., Amilusik, M., Lucznik, B., Fijalkowski, M., Weyher, J.L., Nowak, G., Sadovyi, B., Kamler, G., Kucharski, R., Iwinska, M., Grzegory, I., Bockowski, M.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 653 KB

english, 2014

10

Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy

Koyama, Koji, Aida, Hideo, Kim, Seong-Woo, Ikejiri, Kenjiro, Doi, Toshiro, Yamazaki, Tsutomu

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.11 MB

english, 2014

11

Optical and electrical properties of dislocations in plastically deformed GaN

Yonenaga, I., Ohno, Y., Yao, T., Edagawa, K.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 910 KB

english, 2014

12

Highly transparent ammonothermal bulk GaN substrates

Jiang, Wenkan, Ehrentraut, Dirk, Downey, Bradley C., Kamber, Derrick S., Pakalapati, Rajeev T., Yoo, Hak Do, D’Evelyn, Mark P.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 594 KB

english, 2014

13

Structural defects in bulk GaN

Liliental-Weber, Z., dos Reis, R., Mancuso, M., Song, C.Y., Grzegory, I., Porowski, S., Bockowski, M.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 6.01 MB

english, 2014

14

Metastable nature of InN and In-rich InGaN alloys

Ivanov, S.V., Shubina, T.V., Komissarova, T.A., Jmerik, V.N.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 748 KB

english, 2014

15

Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes

Erlekampf, J., Seebeck, J., Savva, P., Meissner, E., Friedrich, J., Alt, N.S.A., Schlücker, E., Frey, L.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 5.28 MB

english, 2014

16

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Amilusik, M., Sochacki, T., Lucznik, B., Fijalkowski, M., Smalc-Koziorowska, J., Weyher, J.L., Teisseyre, H., Sadovyi, B., Bockowski, M., Grzegory, I.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.49 MB

english, 2014

17

Preface

Freitas, Jaime A., Meissner, Elke, Paskova, Tania, Miyake, Hideto

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 388 KB

english, 2014

18

Feasibility of density and viscosity measurements under ammonothermal conditions

Steigerwald, Thomas G., Alt, Nicolas S.A., Hertweck, Benjamin, Schluecker, Eberhard

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.37 MB

english, 2014

19

Editorial Board

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 31 KB

english, 2014

20

Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

Novikov, S.V., Powell, R.E. L., Staddon, C.R., Kent, A.J., Foxon, C.T.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.38 MB

english, 2014

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