Graded-bandgap SiGe bipolar transistor fabricated with germanium ion implantation
Akira Fukami, Ken-ichi Shoji, Takahiro Nagano, Takashi Tokuyama, Cary Y. YangVolume:
15
Year:
1991
Language:
english
Pages:
4
DOI:
10.1016/0167-9317(91)90173-b
File:
PDF, 167 KB
english, 1991