Volume 15; Issue 1-4

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Microelectronic Engineering
Volume 15; Issue 1-4

Microelectronic Engineering

Volume 15; Issue 1-4

1

Editorial Board

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 55 KB

english, 1991

2

Preface

M. Ilegems, M. Dutoit

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 57 KB

english, 1991

3

Committees

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 45 KB

english, 1991

4

Recent progress in silicon homo- and heterojunction bipolar technology

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 510 KB

english, 1991

5

Device design issues for a high-performance technology with Si or SiGe epitaxial base

J.N. Burghartz, J.D. Cressler, K.A. Jenkins, J.Y.-C Sun, J.M.C. Stork, J.H. Comfort, T.A. Brunner, C.L. Stanis

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 247 KB

english, 1991

6

Graded-bandgap SiGe bipolar transistor fabricated with germanium ion implantation

Akira Fukami, Ken-ichi Shoji, Takahiro Nagano, Takashi Tokuyama, Cary Y. Yang

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 167 KB

english, 1991

7

Low frequency noise in quantum-well GexSi1−x PMOSFET's

J. Chang, D.K. Nayak, V.K. Raman, J.C.S. Woo, J.S. Park, K.L. Wang, C.R. Viswanathan

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 171 KB

english, 1991

8

Measurements of avalanche effects and light emission in advanced Si and SiGe bipolar transistors

Enrico Zanoni, Stefano Bigliardi, Paolo Pavan, Pietro Pisoni, Claudio Canali

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 227 KB

english, 1991

9

Silicon etched-groove permeable base transistor fabrication with cutoff frequencies (fT, fmax) above 25 GHz

A. Gruhle, P.A. Badoz, F. Chevalier, A. Halimaoui, F. Lalanne, M. Mouis, J.L. Regolini, G. Vincent, D. Bensahel

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 363 KB

english, 1991

10

Numerical study of a silicon permeable base transistor with a non-uniform doping profile

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 221 KB

english, 1991

11

Integrated Si/CoSi2/Si-heterotransistors at high current densities

D. Uffmann, C. Adamski

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 185 KB

english, 1991

12

Impact ionization effects in silicon vertical JFET's

A. Chantre, A. Granier, N. Degros, A. Nouailhat

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 185 KB

english, 1991

13

Nonstationary electron transport in realistic submicron BP-SAINT GaAs MESFETs evaluated by ensemble Monte Carlo simulation

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 238 KB

english, 1991

14

Monte Carlo studies on hole mobility in heavily doped n-type silicon

Y. Pan, M. Kleefstra

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 214 KB

english, 1991

15

Monte-Carlo — Poisson coupling using transport coefficients

H. Kosina, Ph. Lindorfer, S. Selberherr

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 206 KB

english, 1991

16

Calculation of internal gettering sites after double-step and CMOS-type thermal anneals

M. Schrems, G. Hobler, M. Budil, H. Pötzl, J. Hage

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 214 KB

english, 1991

17

Stripe width dependence of OED in submicron LOCOS structures: -New boundary condition for self-interstitials-

Y. Shibata, S. Hashimoto, K. Taniguchi, C. Hamaguchi

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 231 KB

english, 1991

18

Modeling of VIPMOS hot electron gate currents

G.J. Hemink, R.C.M. Wijburg, P.B.M. Wolbert, H. Wallinga

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 200 KB

english, 1991

19

Optimization of DMOS cell structures with a self-aligned source contact for smart power applications by realistic numerical device simulation

W. Soppa, W. Kanert, K. Heift

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 178 KB

english, 1991

20

Physical modeling of the transit time in bipolar transistors

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 184 KB

english, 1991

21

ESPRIT II projects on compound semiconductors

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 405 KB

english, 1991

22

Results of the superlattice devices project in Japan

Tetsuo Moriya, Kazuto Ogasawara, Shuku Maeda

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 419 KB

english, 1991

23

Two DEG-base GaSb/InAs hot electron transistors

H. Kawai, K. Funato, K. Taira, F. Nakamura

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 216 KB

english, 1991

24

Applications of scanning tunneling microscopy to the characterization of semiconductor technologies and devices

H. Salemink, O. Albrektsen

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 505 KB

english, 1991

25

Dynamic laser beam testing of a n-MOS device

H. Bergner, K. Hempel, A. Krause, U. Stamm

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 189 KB

english, 1991

26

Effect of well and substrate parameters on the latchup degradation of CMOS structures during e-beam voltage contrast measurements

F.M. Roche, S.D. Bocus, P. Girard

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 174 KB

english, 1991

27

An exponentially ramped current stress method providing a wide range of dielectric parameters

P. Ghezzi, F. Pio, C. Riva, A. Mathewson, F. Naughton, P. O'Sullivan

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 199 KB

english, 1991

28

C-V profiling of delta layers in silicon by quantum and classical approaches

A.C.G. Wood, A.G. O'Neill

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 228 KB

english, 1991

29

Charging properties of SIPOS used as a passivation layer on silicon

B. Liss, A. Lindgren, O. Engström

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 220 KB

english, 1991

30

Strain relaxation in GeSi layers with uniform and graded composition

S.C. Jain, P. Balk, M.S. Goorsky, S.S. Iyer

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 199 KB

english, 1991

31

Rapid thermal annealing of metastable and stable Si/Si1−xGex heterojunction bipolar transistors

Z.A. Shafi, A.S.R. Martin, J. Whitehurst, P. Ashburn, D.J. Godfrey, C.J. Gibblings, I.R.C. Post, C.G. Tuppen, G.R. Booker, M.E. Jones

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 216 KB

english, 1991

32

MBE-grown (Ca, Sr) F2 layers on Si (111) and GaAs (111) : Electronic structure of interfaces

V.V. Afanas'ev, S.V. Novikov, N.S. Sokolov, N.L. Yakovlev

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 181 KB

english, 1991

33

Epitaxial realignment of polycrystalline Si layers by rapid thermal annealing

F. Benyaïch, F. Priolo, E. Rimini, C. Spinella, P. Ward, F. Baroetto

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 328 KB

english, 1991

34

Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure

A. Paraskevopoulos, R. Weber, P. Harde, H. Schroeter-Janβen

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 215 KB

english, 1991

35

Low stress Pd/Ge-based ohmic contacts for GaAs epitaxial-lift-off

I. Pollentier, Y. Zhu, B. De Meulemeester, P. Van Daele, P. Demeester

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 195 KB

english, 1991

36

Contact metallurgy optimization for ohmic contacts to InP

Thomas Clausen, Arne Skyggebjerg Pedersen, Otto Leistiko

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 279 KB

english, 1991

37

Self-aligned AlGaAs/GaAs HBT's with tungsten N and P type ohmic contacts

P. Launay, B. Bamueni, A.M. Duchenois, P. Blanconnier

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 215 KB

english, 1991

38

Results of the three-dimensional integrated circuits project in Japan

Tetsuo Moriya, Tsukasa Watanabe, Isao Nakano, Shuku Maeda

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 502 KB

english, 1991

39

9.5×9.5mm2 - Area recrystallization, 6μm-viahole filling and thin 14μm CMOS SOI designing for realizing three-dimensional integrated circuit

S. Onga, S. Kambayashi, M. Yoshimi, K. Natori, M. Kashiwagi

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 237 KB

english, 1991

40

Four-story structured character recognition sensor image with 3D integration

Koui Ohtake, Kazumasa Kioi, Toshiyuki Shinozaki, Shinji Toyoyama, Kazuhiko Shirakawa, Shuhei Tsuchimoto

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 257 KB

english, 1991

41

The 3-D IC with 4-layer structure for the fast range sensing system

Y. Akasaka, Y. Inoue, M. Nakaya, T. Nishimura

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 211 KB

english, 1991

42

4-Layer 3-D IC with a function of parallel signal processing

Y. Itoh, A. Wada, K. Morimoto, Y. Tomita, K. Yamazaki

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 303 KB

english, 1991

43

Manufacturability of 3D-epitaxial-lateral-overgrowth CMOS circuits with three stacked channels

Gerhard Roos, Bernd Hoefflinger, Martin Schubert, René Zingg

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 333 KB

english, 1991

44

In situ pseudo—MOS transistor in as-grown silicon on insulator wafers

S. Williams, S. Cristoloveanu

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 213 KB

english, 1991

45

Parasitic transients induced by floating substrate effect and bipolar transistor on SOI technologies

C. Leroux, J. Gautier, A.J. Auberton-Hervé, B. Giffard, M. Spalanzani

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 681 KB

english, 1991

46

Reduction of the latch effect in SOI MOSFETS by the silicidation of the source

L.J. McDaid, S. Hall, W. Eccleston, J.C. Alderman

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 206 KB

english, 1991

47

Measurement of SOI film thickness

G. Badenes, H.B. Abel, H. Gassel, G. Burbach, H. Vogt

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 164 KB

english, 1991

48

Worst-case simulation using principal component analysis techniques: An investigation

J.A. Power, D. Barry, A. Mathewson, W.A. Lane

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 206 KB

english, 1991

49

A new open technology CAD system

F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, S. Selberherr, H. Stippel, W. Tuppa, P. Verhas, K. Wimmer

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 179 KB

english, 1991

50

Analytical device model including velocity overshoot effect for ultra small MOSFETs

K. Sonoda, K. Taniguchi, C. Hamaguchi

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 160 KB

english, 1991

51

Application of a linear scaling factor for modeling I-V-characteristics of submicron MOSFETs with channel lengths down to 0.4 μm

H.-J. Wildau, F. Scheidemantel, H.G. Wagemann

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 187 KB

english, 1991

52

Physics-based circuit-level model for submicron MOSFETs

R.M.D. Velghe, F.M. Klaassen

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 164 KB

english, 1991

53

An analytical model for GAA transistors

A. Terao, F. Van de Wiele

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 175 KB

english, 1991

54

1D modeling of SOI MOSFETs using distinct quasi-fermi potentials

M. Schubert, B. Höfflinger, D. Schroeder, R.P. Zingg

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 199 KB

english, 1991

55

CMOS technologies for logic applications

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 667 KB

english, 1991

56

A new submicron MOSFET technology with Gate Overlap on Twin Oxide (GOTO) LDD structure

Young-Suk Choi, Tae-Pok Rhee, Kwang-Dong Yoo, Taeyoung Won

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 177 KB

english, 1991

57

A fully scaled 0.5μm CMOS process for fast random logic

M. Lerme, G. Guegan, S. Deléonibus, F. Martin, M. Heitzmann, F. Vinet, C. Jaffard, M. Belleville, M. Guerin, G. Reimbold, C. Leroux

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 170 KB

english, 1991

58

GaInAs/GaInAsP SCH-MQW-laser emitting at 1.35 μm grown by LP-MOVPE

M. Stollenwerk, D. Grützmacher, M. Möhrle, F. Fidorra, K. Heime

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 168 KB

english, 1991

59

AlInAs/GaInAs metal-semiconductor-metal photodiodes with very low dark current

A Temmar, J.P. Praseuth, J.F. Palmier, A. Scavennec

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 191 KB

english, 1991

60

Planar integration technologies for optoelectronic integrated circuits

DA Allan, J Herniman, PJ O'Sullivan, P Birdsall, A Quayle

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 180 KB

english, 1991

61

10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs

V. Hurm, J. Rosenzweig, M. Ludwig, A. Axmann, W. Benz, M. Berroth, R. Osorio, A. Hülsmann, G. Kaufel, K. Köhler, B. Raynor, Jo. Schneider

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 218 KB

english, 1991

62

Single- and multi-electrode distributed feedback lasers: Modelling taking into account hole burning and comparison with experiment

P. Correc, J.C. Bouley, C. Moreau

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 201 KB

english, 1991

63

Planar 100 GHz silicon detector circuits

K.M. Strohm, J.F. Luy, J. Büchler, F. Schäffler, A. Schaub

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 261 KB

english, 1991

64

A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits

U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 227 KB

english, 1991

65

Fabrication procedures of photovoltaic lead-chalcogenide-on-silicon infrared sensor arrays for thermal imaging

T. Hoshino, H. Zogg, C. Maissen, J. Masek, S. Blunier

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 226 KB

english, 1991

66

Optimization of the energy resolution of the diffusion based nuclear radiation sensors

T. Otaredian, S.E. Wouters

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 193 KB

english, 1991

67

Heterostructure bipolar transistors based on InP and application to integrated circuits for lightwave communication

Richard N. Nottenburg

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 507 KB

english, 1991

68

Design and characteristics of a GaAs BMFET

G. Schweeger, F.G. Della Corte, H.L. Hartnagel

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 215 KB

english, 1991

69

The temperature dependent current gain of heterojunction bipolar transistors

Bo Willén, Urban Westergren

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 178 KB

english, 1991

70

20 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistors

U. Nowotny, M. Lang, M. Berroth, V. Hurm, A. Hülsmann, G. Kaufel, K. Köhler, B. Raynor, Jo. Schneider

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 129 KB

english, 1991

71

A 2.5 ns 8×8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors

M. Berroth, V. Hurm, U. Nowotny, A. Hülsmann, G. Kaufel, K. Köhler, B. Raynor, Jo. Schneider

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 145 KB

english, 1991

72

Poly-crystalline silicon thin film devices for large area electronics

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 420 KB

english, 1991

73

A lateral bipolar transistor concept on SOI using a self-aligned base definition technique

U. Magnusson, B. Edholm, F. Masszi

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 176 KB

english, 1991

74

Subthreshold currents in submicron N and PMOS and static consumption of SRAMs circuits made in thin film SOI

O. Le Néel, M. Haond

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 198 KB

english, 1991

75

Hysteresis and critical phenomena in silicon on insulator MOSFET's

T. Ouisse, G. Ghibaudo, J. Brini, S. Cristoloveanu, G. Borel

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 180 KB

english, 1991

76

Frequency dependent small-signal drain characteristics in silicon-on-sapphire MOSFETs

R. Howes, W. Redman-White

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 182 KB

english, 1991

77

High capacitance isolated surrounding stacked trench cell for advanced DRAMS

F. Hofmann, W. Hänsch, H. Geib, W. Rösner, D. Takacs, L. Risch

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 202 KB

english, 1991

78

Shrink potential, stability and yieldability of a multilayer vertical stacked capacitor for 64/256 MDRAM

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 242 KB

english, 1991

79

Fully scalable gain memory cell for future drams

W.H. Krautschneider, L. Risch, K. Lau, D. Schmitt-Landsiedel

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 185 KB

english, 1991

80

DRAM cell characterization by AC-impedance measurement

H.-M. Mühlhoff, J. Dietl, L. Kusztelan

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 230 KB

english, 1991

81

Parasitic breakdown control in HVIC process integration

A.F.J. Murray, W.A. Lane, C.G. Cahill, J.D. Barrett

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 175 KB

english, 1991

82

Design and fabrication of improved resurfed LDMOS devices

S. Hidalgo, J. Fernández, F. Berta, P. Godignon, J. Rebollo, J. Millán

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 200 KB

english, 1991

83

Silicon microsensors: Construction, design and performance

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 962 KB

english, 1991

84

Silicon micromachining for sensor applications

F. Rudolf, J. Bergqvist

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 450 KB

english, 1991

85

Micromachined silicon cantilevers and tips for scanning probe microscopy

R.A. Buser, J. Brugger, N.F. de Rooij

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 269 KB

english, 1991

86

Realization of Different Polysilicon resonators with integrated excitation and detection elements

C. Linder, M. Grétillat, N.F. de Rooij

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 266 KB

english, 1991

87

SiON-Au double layer microactuator fabrication

Q. Dong, W. Benecke, H. Schliwinski

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 166 KB

english, 1991

88

Thermal microtransducers by CMOS technology combined with micromachining

H. Baltes, D. Moser, R. Lenngenhager, O. Brand

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 289 KB

english, 1991

89

Modelization and fabrication of ISFET based sensors

A. Merlos, C. Cané, J. Bausells, J. esteve

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 203 KB

english, 1991

90

Limitations of digital CMOS-processes for analog applications due to channel length modulation and hot carrier degradation

M. Steimle, H.-H. Mühloff

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 207 KB

english, 1991

91

A new vertically layered elevated hot carrier resistant source/drain structure for deep submicron MOSFETs

Marius Orlowski, Carlos Mazuré, Matthew Noell

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 210 KB

english, 1991

92

Analysis of post-stress effects in passivated MOSFET's after hot-carrier stress.

E. de Schrijver, P. Heremans, R. Bellens, G. Groesenken, H.E. Maes

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 241 KB

english, 1991

93

Time dependence of hot-carrier degradation in LDD nMOSFETs

Q. Wang, W.H. Krautschneider, M. Brox, W. Weber

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 193 KB

english, 1991

94

Hot-carrier degradation monitoring in LDD n-MOSFETs using drain gated-diode measurements

A. Asenov, J. Berger, W. Weber, M. Bollu, F. Koch

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 189 KB

english, 1991

95

Transconductance degradation and its correlation to the second substrate current hump of submicron NMOS LDD transistors

Edmundo A. Gutieŕrez D., Ludo Deferm, Gilbert Declerck

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 169 KB

english, 1991

96

A phyiscal characterization of dynamically stressed CMOS transistors

C. Bergonzoni, G. Dalla Libera

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 227 KB

english, 1991

97

Influence of hot-carrier stress on the kink/hysteresis behaviour of NMOST's operating at liquid temperatures

E. Simoen, B. Diericx, M.-H. Gao, C. Claeys

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 164 KB

english, 1991

98

MOSFET mobility degradation due to interface-states, generatd by Fowler-Nordheim electron injection.

A.T. Dejenfelt, O. Engström

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 241 KB

english, 1991

99

Rapid thermal processing and thin film technologies

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 340 KB

english, 1991

100

Boron diffusion effects from p+ polysilicon gate in thin thermal oxide and plasma nitrided oxide

B. Piot, K. Barla, B. Garcin, A. Straboni

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 186 KB

english, 1991

101

Thin dielectric behavior and boron penetration under high temperature H2 SEG prebake

C. Mazuré, J. Fitch, D. Denning, C. Gunderson, M. Haond, A. Straboni, B. Piot, K. Barla

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 204 KB

english, 1991

102

Effect on nitrogen profile on electrical characteristics of ultrathin SiO2 films nitrided by RTP

P. Letourneau, A. Harb, M. Dutoit, J. Solo de Zaldivar

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 200 KB

english, 1991

103

Passivation effects on step AlCu/TiN line electromigration performance

L. Ferlazzo, G. Lormand, G. Reimbold

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 228 KB

english, 1991

104

Future trends in BiCMOS technology

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 506 KB

english, 1991

105

BICMOS–The technology for integrating systems onto one silicon IC

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 603 KB

english, 1991

106

A sub-micron BiCMOS technology for telecommunications

R. Hadaway, P. Kempf, P. Schvan, M. Rowlandson, V. Ho, J. Kolk, B. Tait, D. Sutherland, G. Jolly, I. Emesh

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 216 KB

english, 1991

107

Optimization of the high-frequency performance of the BASIC bipolar technology

R. Dekker, R. van Es, S. Jansen, P. Kranen, H. Maas, A. Pruijmboom, J. van der Velden

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 247 KB

english, 1991

108

A 43 ps Si bipolar technology

Yong Seo Koo, Sang Hoon Chai, Kee Soo Nam, Chul An

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 234 KB

english, 1991

109

Borosilicate glass and its applications in bipolar technology

M. Bianco, K. Ehinger, B. Hautke, H. Klose, H.v. Philipsborn

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 170 KB

english, 1991

110

On the temperature dependence of polysilicon emitter transistors

Denis J. Doyle, William A. Lane

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 212 KB

english, 1991

111

The effects of scaling and rapid thermal annealing on the 1/∫ noise of polysilicon emitter bipolar transistors

N. Siabi-Shahrivar, H.A. Kemhadjian, W. Redman-White, P. Ashburn, J.D. Williams

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 210 KB

english, 1991

112

Quantum transport effects in deep submicron n-MOSFET

J.P. Miéville, M. Eschle, Z.M. Shi, J. Barrier, M. Dutoit, J.M. Moret, Y. Oppliger

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 192 KB

english, 1991

113

Low frequency noise in 100 nm n-MOSFET's at low temperatures

Z.M. Shi, J.-P. Miéville, J. Barrier, M. Dutoit

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 177 KB

english, 1991

114

Investigation of drain current RTS noise in small area silicon MOS transistors

O. Roux, B. Dierickx, E. Simoen, C. Claeys, G. Ghibaudo, J. Brini

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 171 KB

english, 1991

115

Determination of the gate-voltage dependent series resistance and channel length in sub micron LDD-MOSFETs

J.A.M. Otten, F.M. Klaassen

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 176 KB

english, 1991

116

Triggering and sustaining of snapback in MOSFETs

Tomasz Skotnicki, Gérard Merckel, Christian Denat

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 217 KB

english, 1991

117

A high threshold low capacitance MOSFET

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 145 KB

english, 1991

118

Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE

H. Künzel, W. Passenberg, J. Böttcher, C. Heedt

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 241 KB

english, 1991

119

MBE growth and characterization of MODFET heterostructures using pseudomorphic InGaAs or InAs/GaAs superlattice channels

M.V. Baeta Moreira, M.A. Py, M. Ilegems

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 235 KB

english, 1991

120

Extraction of FET parameters at low drain bias by taking into account the dependence of mobility on 2D electron gas concentration

M.A. Py, Y. Haddab, Z.M. Shi, H.-J. Bühlmann, M.V. Baeta Moreira, M. Ilegems

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 205 KB

english, 1991

121

High energy photon emission in GaAs MESFETs and AlGaAs/GaAs HEMTs

E. Zanoni, C. Tedesco, A. Paccagnella, C. Canali, S. Bigliardi, M. Manfredi

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 235 KB

english, 1991

122

Integrated quantum well bipolar devices for tunable detection and optical logic applications

P. Bhattacharya, J. Singh, S. Goswami, W-Q. Li

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 333 KB

english, 1991

123

Optical characterization of strained InGaAs/InP quantum well structures

K. Wolter, R. Schwedler, B. Gallmann, Ch. Jaekel, M. Stollenwerk, J. Camassel, J.P. Laurenti, S. Juillaguet

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 192 KB

english, 1991

124

On the numerical simulation of C-V measurements at isotype and anisotype heterojunctions

W. Pittroff, H.G. Bach, G. Beister

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 165 KB

english, 1991

125

Non volatile memories-status and emerging trends

M. Melanotte, R. Bez, G. Crisenza

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 530 KB

english, 1991

126

A back-biased 0.65 μm Leffn CMOS EEPROM technology for next-generation sub 7 ns programmable logic devices

Michael J. Hart, Philip J. Cacharelis, Roger D. Carpenter, David G. Tsuei, Raminda U. Madurawe, Bal S. Sandhu, Richard G. Smolen, Andrew P. Dumlao, Tim L. Garverick, Thomas McFarlane, Martin H. Manley

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 240 KB

english, 1991

127

The high injection MOS cell: a novel 5V-only flash EEPROM concept with a 1μs programming time

J. Van Houdt, D. Wellekens, G. Groeseneken, L. Deferm, H.E. Maes

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 219 KB

english, 1991

128

Programming window degradation in flotox EEPROM cells

C. Papadas, G. Ghibaudo, G. Pananakakis, C. Riva, P. Ghezzi

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 196 KB

english, 1991

129

Device simulations for EPROM cells scaling down

C. Bergonzoni, E. Camerlenghi, P. Caprara

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 211 KB

english, 1991

130

Compact spice model of EEprom memory cell for writing/erasing/read operation

François Gigon

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 180 KB

english, 1991

131

Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica

A. Soennecken, U. Hilleringmann, K. Goser

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 245 KB

english, 1991

132

Sub-half micron isolation method with self-aligned channel stopper

W. Wakamiya, Y. Ohno, H. Kimura, S. Satoh

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 150 KB

english, 1991

133

A new sealed poly buffer LOCOS isolation scheme

N.A.H. Wils, A.H. Montree

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 155 KB

english, 1991

134

Optimisation of isolation for 0.5 μm CMOS technology using SILO process with R.T.N. of silicon

G. Guegan, S. Deleonibus, M. Lerme, G. Reimbold, P. Molle

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 173 KB

english, 1991

135

Improved shallow trench isolation for sub-halfmicron CMOS

J.P. Cabanal, M. Haond

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 208 KB

english, 1991

136

A new process for defect-free definition of active areas in deep trench isolated bipolar devices

G Fallico, C Rapisarda, PJ Ward, R Zambrano

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 193 KB

english, 1991

137

Low dimensional devices: High magnetic field and optical spectroscopy studies of resonant tunneling and quantum well phenomena

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 27 KB

english, 1991

138

Pseudomorphic two-dimensional electron-gas-emitter resonant tunneling devices

H. Brugger, U. Meiners, C. Wölk, R. Deufel, A. Marten, M. Rossmanith, K.v. Klitzing, R. Sauer

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 181 KB

english, 1991

139

MOVPE on patterned substrates: a new fabrication method for nanometer structure devices

Yvan D. Galeuchet, Hugo Rothuizen, Peter Roentgen

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 231 KB

english, 1991

140

Study of vertical transport through Schottky-gated, laterally confined quantum-dot devices

N. Blanc, P. Guéret, R. Germann, H. Rothuizen

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 227 KB

english, 1991

141

Microwave noise behaviour of resonant tunnelling diodes

J.J.M. Kwaspen, H.C. Heyker, Th.G. van de Roer

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 184 KB

english, 1991

142

GaAs opto-electronic integrated circuits for high speed optical communications

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 186 KB

english, 1991

143

GaAs & Si MMIC building blocks: a moot point revisited

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 399 KB

english, 1991

144

Author index

Journal:

Microelectronic Engineering

Year:

1991

File:

PDF, 181 KB

1991

145

Effects of high normal electric fields in deep submicron MOSFET's

M.J. van Dort, P.H. Woerlee, A.J. Walker, C.A.H. Juffermans, H. Lifka

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 175 KB

english, 1991

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