A smart power process in “direct-bonded” silicon on...

Microelectronic Engineering 1992 Vol. 19; Iss. 1-4

A smart power process in “direct-bonded” silicon on insulator with 150 V VDMOS, CMOS and bipolar transistors

T. Ifström, U. Apel, H.-G. Graf, C. Harendt, B. Höfflinger
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Volume:
19
Year:
1992
Language:
english
Pages:
4
DOI:
10.1016/0167-9317(92)90412-k
File:
PDF, 401 KB
english, 1992
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