Volume 19; Issue 1-4

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Microelectronic Engineering
Volume 19; Issue 1-4

Microelectronic Engineering

Volume 19; Issue 1-4

1

Editorial Board

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 80 KB

english, 1992

2

Preface

H.E. Maes, R.P. Mertens, R.J. Van Overstraeten

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 66 KB

english, 1992

3

Committees

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 122 KB

english, 1992

4

Sponsors

Journal:

Microelectronic Engineering

Year:

1992

File:

PDF, 24 KB

1992

5

Contents

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 758 KB

english, 1992

6

ULSI CMOS — The next ten years

Pallab Chatterjee

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 259 KB

english, 1992

7

Recent development of InP-based optoelectronic devices

Yasuharu Suematsu

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 86 KB

english, 1992

8

Isolation design comparisons for 0.5 μm CMOS technology using SILO process

G. Guegan, S. Deleonibus, M. Lerme, J.P. Blanc

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 298 KB

english, 1992

9

Investigations of the resistivity of TiSi/p+ contacts and their optimisation in a 0.5 um CMOS technology

W. Neumueller, F. Hoehnel

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 261 KB

english, 1992

10

Device characterisation of a high-performance 0.25 μm CMOS technology

P.H. Woerlee, C.A.H. Juffermans, H. Lifka, W.H. Manders, H.G. Pomp, G.M. Paulzen, A.J. Walker, R. Woltjer

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 218 KB

english, 1992

11

Shallow P+-junction technology for 0.25 μm CMOS

H. Pomp, P.H. Woerlee, A.J. Walker

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 230 KB

english, 1992

12

Simulation of compound semiconductor devices

Wim Schoenmaker, Rudi Vankemmel

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 431 KB

english, 1992

13

Numerical analysis of InP-JFET by use of a quasi 2D-model

W. Brockerhoff, P. Ellrodt, W. Güldner, K. Heime, F.J. Tegude

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 216 KB

english, 1992

14

Two-dimensional noise calculations of sub-micrometer MESFETs

A. Abou-Elnour, K. Schuenemann

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 214 KB

english, 1992

15

Fast and sensitive two-terminal double-heterojunction optical thyristors

P.L. Heremans, M. Kuijk, R. Vounckx, G. Borghs

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 314 KB

english, 1992

16

Experiments on optoelectronic bistability in distributed AIAs/GaAs-Bragg reflectors

S. Knigge, S. Zumkley, G. Wingen, O. Humbach, C. Chaix, D. Jäger

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 218 KB

english, 1992

17

Surface emitting semiconductor laserdiodes based on surface mode emission

A. Köck, A. Seeberg, M. Rosenberger, E. Gornik, C. Thanner, L. Korte

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 163 KB

english, 1992

18

First demonstration of sub-nanosecond photon timing with a Germanium photodiode

A. Lacaita, S. Cova, F. Zappa, G. Ripamonti, P. Lovati

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 244 KB

english, 1992

19

Total Quality Management (TQM) in research and development

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 369 KB

english, 1992

20

A GIGABIT scalable SILO field isolation using Rapid Thermal Nitridation (RTN) of silicon

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 323 KB

english, 1992

21

New transient characterization of latchup phenomenon in CMOS cell

F.M. Roche, S.D. Bocus, P. Girard, R. Barille

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 226 KB

english, 1992

22

A silicon vertical JFET compatible with standard 0.7 μm CMOS technology

A. Granier, M. Mouis, N. Degors, J. Kirtsch, A. Chantre

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 294 KB

english, 1992

23

Physics and modelling of polysilicon TFTs

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 407 KB

english, 1992

24

Comparative study of low temperature poly-Si TFTs obtained by various crystallization techniques for use in active matrix LCDs

H. Pattyn, J. Poortmans, P. Debenest, M. Caymax, P. Vetter, M. Elliq, E. Fogarassy, Z. Nényei, J. Nijs, R. Mertens

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 287 KB

english, 1992

25

Laser crystallised poly-Si TFTs

SD Brotherton, DJ McCulloch, JP Gowers, A Gill

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 252 KB

english, 1992

26

Gate bias instability in polycrystalline silicon thin film transistors formed using various gate dielectrics

ND Young, A Gill

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 249 KB

english, 1992

27

Hot carriers effects in polycrystalline silicon thin-film transistors

L. Mariucci, A. Pecora, G. Fortunato, C. Reita, P. Migliorato

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 263 KB

english, 1992

28

Compound semiconductor devices for operation at elevated temperatures

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 385 KB

english, 1992

29

Modelling of gain-guided vertical-cavity laser diodes

R. Michalzik, K.J. Ebeling

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 223 KB

english, 1992

30

Tunneling and ionization phenomena in GaAs pin diodes

D. Liebig, P. Lugli, P. Vogl, M. Claassen, W. Harth

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 242 KB

english, 1992

31

The permeable junction base transistor with a new gate of extremely high doped p++ - GaAs

J. Gräber, M. Kamp, G. Mörsch, R. Meyer, H. Hardtdegen, H. Lüth

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 266 KB

english, 1992

32

Impact ionization phenomena in AlGaAs/GaAs HBTs

A. De Carlo, P. Lugli, P. Pavan, E. Zanoni, R. Malik

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 239 KB

english, 1992

33

Smart power devices

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 163 KB

english, 1992

34

Light triggered thyristor with a MOS amplifying gate: an example of functionally integrated vertical high voltage power device

J-L. Sanchez, R. Berriane, F. Rossel, Ph. Leturcq

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 286 KB

english, 1992

35

A self-isolated and efficient power device for HVIC's: RESURF LDMOS with SIPOS layers

G. Charitat, M.A. Bouanane, P. Rossel

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 268 KB

english, 1992

36

A smart power process in “direct-bonded” silicon on insulator with 150 V VDMOS, CMOS and bipolar transistors

T. Ifström, U. Apel, H.-G. Graf, C. Harendt, B. Höfflinger

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 401 KB

english, 1992

37

A novel technique for the production of thin devices

R. Wilson, H.S. Gamble, A.S. Hudson

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 281 KB

english, 1992

38

Floating well based design methodology aimed to improve latch-up immunity in a smart power technology

M. Puig Vidal, M. Bafleur, J. Buxo, G. Sarrabayrouse

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 294 KB

english, 1992

39

A fully integrated silicon-based 40-V thermal ink jet IC

William G. Hawkins, Cathie J. Burke, Thomas E. Watrobski, Thomas A. Tellier, Sophie Verdonckt-Vandebroek, T.Paul Chow

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 214 KB

english, 1992

40

Amorphous silicon TFTs and their applications

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 441 KB

english, 1992

41

Current DLTS measurements on poly-Si thin film transistors

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 244 KB

english, 1992

42

Analysis of short channel effects in poly-Si thin film transistors: A new method

C. Reita, P. Migliorato, A. Pecora, G. Fortunato, L. Mariucci

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 217 KB

english, 1992

43

Thin film cadmium selenide technology in large area active matrix high resolution displays

J. Farrell, M. Westcott, A. Van Calster, J. De Baets, I. De Rycke, J. Capon, H. De Smet, J. Doutreloigne, J. Vanfleteren

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 383 KB

english, 1992

44

CMOS compatible micromachining by dry silicon-etching techniques

S. Adams, U. Hilleringmann, K. Goser

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 334 KB

english, 1992

45

Micromechanically structurized sensors on GaAs: An integrated anemometer

K. Fricke, H.L. Hartnagel, S. Ritter, J. Würfl

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 217 KB

english, 1992

46

Surface micromachined scanning mirrors

Kent Erik Mattson

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 256 KB

english, 1992

47

High performance hybrid optoelectronic terminal components for optical interconnect

A.J. Moseley, M.J. Goodwin, R.C. Goodfellow

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 58 KB

english, 1992

48

Heteroepitaxial or epitaxial lift-off approach for future optoelectronic GaAs MESFET/InP optical switch integration ?

I. Pollentier, L. Buydens, P. Van Daele, P. Demeester

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 264 KB

english, 1992

49

Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon

U. Hilleringmann, K. Goser

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 286 KB

english, 1992

50

6 × 700 Mbit/s array transmitter/receiver pair realised in optohybrid silicon motherboard technology

J.W. Parker, P.M. Harrison, P.J. Ayliffe, T.V. Clapp, M.C. Geear, R.G. Peall

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 400 KB

english, 1992

51

10 Gbit/s operation of integrated BRS laser-MISFET on indium phosphide

G. Post, C. Kazmierski, F. Delorme

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 361 KB

english, 1992

52

Resonant wavelength selective photodetectors

T. Wipiejewski, K. Panzlaff, K.J. Ebeling

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 212 KB

english, 1992

53

Impact of new chip technologies on consumer products

Theo A.C.M. Claasen

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 242 KB

english, 1992

54

Impact of new chip technologies on telecommunications

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 499 KB

english, 1992

55

Ferroelectrics for non-volatile memories

R. Cuppens, P.K. Larsen, G.A.C.M. Spierings

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 535 KB

english, 1992

56

A novel isolation scheme for implementation in very high density AMG EPROM and FLASH EEPROM arrays

Graham R. Wolstenholme, Albert Bergemont

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 229 KB

english, 1992

57

An analytical model for the optimization of high injection MOS Flash E2PROM devices

J. Van Houdt, G. Groeseneken, H.E. Maes

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 245 KB

english, 1992

58

Simulation of EPROM device programming using the hydrodynamic model

S. Keeney, A. Mathewson, L. Ravazzi, C. Lombardi

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 256 KB

english, 1992

59

Carrier temperature dependent gate current modeling for EEPROM simulation

J.G. Rollins, V. Axelrad, S.J. Motzny

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 300 KB

english, 1992

60

Reliability properties of rapid thermal processed nitrided oxides after Fowler-Nordheim electrical stress

C. Papadas, G. Ghibaudo, G. Pananakakis, P. Mortini, C. Riva, F. Pio

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 227 KB

english, 1992

61

Monte Carlo simulation of charge transport in semiconductor devices

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 424 KB

english, 1992

62

Ensemble Monte Carlo simulation of a pulse-doped GaAs MESFET with a doped-layer of 100A

Y. Yamada, T. Tomita

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 236 KB

english, 1992

63

Quantum analysis of Zener-assisted impact ionization for transient regimes and strong electric fields

W. Quade, F. Rossi, C. Jacoboni, E. Schöll

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 213 KB

english, 1992

64

Hydrodynamic simulation of an n-MOSFET at 77 K

A. Leone, A. Gnudi, G. Baccarani

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 243 KB

english, 1992

65

Hydrodynamic simulation of hysteresis phenomena in SOI MOSFET characteristics

I. Bork, B. Meinerzhagen, W.L. Engl

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 208 KB

english, 1992

66

Non-local avalanche calculation for deep sub-micron Si devices

G. Streutker, J.W. Slotboom

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 201 KB

english, 1992

67

Current status of heterojunction bipolar and high-electron mobility transistor technologies

Dimitris Pavlidis

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 512 KB

english, 1992

68

Experimental and theoretical investigation of parameter evolution of ultra-short gate standard and pseudomorphic HEMTs

A. de Lustrac, P. Crozat, P. Dollfus, Y. Jin, K. Yazbek, R. Adde, G. Vernet, M. Van Hove, W. de Raedt, M. Van Rossum, Y. Jin, B. Etienne, H. Launois

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 238 KB

english, 1992

69

Metamorphic In0.27Ga0.73AsIn0.25Al0.75As HEMT on GaAs: MBE growth and device performance

P. Win, Y. Cordier, Y. Druelle, C. Bouillet, J. Favre, A. Cappy

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 211 KB

english, 1992

70

Fabrication of 0.1-μm planar-doped pseudomorphic HEMT's using a PECVD silicon nitride assisted process

G. Zou, W. De Raedt, M. Van Hove, M. Van Rossum, Y. Jin, H. Launois

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 263 KB

english, 1992

71

Fabrication of striped channel pseudomorphic HEMTs

S. Bollaert, P. Legry, P. Win, H. Happy, A. Cappy

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 278 KB

english, 1992

72

Pseudomorphic GaxIn1−xAs on InP for HEMT structures grown by MBE

H. Künzel, H.G. Bach, J. Böttcher, J. Dickmann, H. Dämbkes, G. Nachtwei, S. Heide

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 280 KB

english, 1992

73

SiC growth and its application to high-speed Si-HBTs

T. Sugii, T. Yamazaki, Y. Arimoto, T. Ito, Y. Furumura, I. Namura, H. Goto, A. Tahara

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 468 KB

english, 1992

74

Polysilicon emitter with a nitrided interface

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 216 KB

english, 1992

75

Ultrashallow emitter-base profiles by double diffusion

M. Biebl, M. Bianco, K. Ehinger, H. v.Philipsborn, H. Klose

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 242 KB

english, 1992

76

SiCGe ternary alloys — extending Si-based heterostructures

S.S. Iyer, K. Eberl, A.R. Powell, B.A. Ek

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 248 KB

english, 1992

77

Avoiding dislocations in ion-implanted silicon

F.W. Saris, J.S. Custer, R.J. Schreutelkamp, R.J. Liefting, R. Wijburg, H. Wallinga

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 631 KB

english, 1992

78

Electrical behaviour of junctions obtained by rapid thermal annealing of BF2 implanted layers

M.L. Polignano, A. Losavio

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 271 KB

english, 1992

79

Anomalous electrical deactivation of low concentration rapid thermally annealed arsenic implanted silicon

J.L. Altrip, A.G.R. Evans

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 288 KB

english, 1992

80

Process integration for barrier layers and Al-alloys using a sputtering cluster tool

H. Wendt, J. Willer, D. Emmer, S. Irl

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 289 KB

english, 1992

81

Properties of LPCVD TiN barrier layers

J.T. Hillman, D.W. Studiner, M.J. Rice Jr., C. Arena

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 197 KB

english, 1992

82

In-process control of Co silicide formation by RTA

J-M. Dilhac, C. Ganibal, N. Nolhier, P.B. Moynagh, C.P. Chew, P.J. Rosser

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 229 KB

english, 1992

83

Measurement of wafer temperature by interference

D. Bollmann, K. Haberger

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 196 KB

english, 1992

84

Advanced III–V HEMT technology for microwave and millimetre-wave applications

A.P. Long, I.G. Eddison

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 449 KB

english, 1992

85

Very non linear transconductance of highly delta-doped multichannel HEMTs

D. Théron, T. Coupez, B. Bonte, Y. Crosnier

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 238 KB

english, 1992

86

Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET

F. Buchali, C. Heedt, W. Prost, I. Gyuro, H. Meschede, F.J. Tegude

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 232 KB

english, 1992

87

Hot-electron induced degradation in AlGaAs/GaAs HEMTs

C. Tedesco, C. Canali, F. Magistrali, A. Paccagnella, E. Zanoni

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 265 KB

english, 1992

88

Normally-off GaAs BMFET with heterojunction emitter

G. Schweeger, H.L. Hartnagel

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 228 KB

english, 1992

89

A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation

S.J. Prasad, B. Vetanen, C. Haynes, S. Park, I. Beers, S. Diamond, G. Pubanz, J. Ebner, S. Sanielevici, A. Agoston

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 194 KB

english, 1992

90

Linear and nonlinear analysis of submicron n+nn+ diodes for microwave generators

V. Gruzhinskis, E. Starikov, P. Shiktorov, L. Reggiani, L. Varani, T. Kuhn

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 185 KB

english, 1992

91

Coplanar microwave phase shifter for InP-based MMICs

M. Dragoman, M. Block, R. Kremer, F. Buchali, F.J. Tegude, D. Jäger

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 175 KB

english, 1992

92

Heterojunction bipolar transistors with Si1−xGex base

A. Pruijmboom, C.E. Timmering, J.M.L. van Rooij-Mulder, D.J. Gravesteijn, W.B. de Boer, W.J. Kersten, J.W. Slotboom, C.J. Vriezema, R. de Kruif

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 361 KB

english, 1992

93

Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of long wave-length infrared (LWIR) detectors

S.C. Jain, J. Poortmans, J. Nijs, P. Van Mieghem, R.P. Mertens, R. Van Overstraeten

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 206 KB

english, 1992

94

Evidence of the influence of heavy-doping induced bandgap narrowing on the collector current of strained SiGe-base heterojunction bipolar transistors

J. Poortmans, S.C. Jain, M. Caymax, A. Van Ammel, J. Nijs, R.P. Mertens, R. Van Overstraeten

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 277 KB

english, 1992

95

Characterisation of heterojunction bipolar transistors incorporating Si/Si1−xGex epitaxial double layers with n+ emitter implants

DJ Robbins, WY Leong, JL Glasper, AJ Pidduck, R Jackson, IRC Post, ZA Shafi, P Ashburn

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 230 KB

english, 1992

96

Dynamic effects in hot-carrier degradation relevant for CMOS operation

W. Weber, M. Brox

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 562 KB

english, 1992

97

Aging study of optimized submicron n-MOSFET's (DC, AC and alternating stress conditions): correlation between charge pumping and classical parameters

Nathalie Revil, Sorin Cristoloveanu, Patrick Mortini

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 245 KB

english, 1992

98

On the different time dependence of interface trap generation and charge trapping during hot carrier degradation in CMOS

R. Bellens, G. Groeseneken, P. Heremans, H.E. Maes

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 224 KB

english, 1992

99

A simple charge-pumping method to measure the logarithmic-time dependence of trapped oxide charge in p-MOSFET's

A. Bravaix, D. Vuillaume

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 227 KB

english, 1992

100

Hot carrier-induced degradation mechanisms in short-channel SIMOX p-MOSFET's

T. Ouisse, A.J. Auberton-Hervé, B. Giffard, G. Reimbold

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 261 KB

english, 1992

101

Hole trapping and hot-hole induced interface trap generation in MOSFET's at different temperatures

G. Van den Bosch, G. Groeseneken, P. Heremans, M. Heyns, H.E. Maes

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 240 KB

english, 1992

102

Dumping of electron heating effects in thermal oxides on Ge-doped silicon

V.V. Afanas'ev, A.Ph. Akulov, E.M. Gorid, V.V. Petrov, V.S. Prosolovich

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 222 KB

english, 1992

103

The role of electrically active and inactive donators in the oxidation rate enhancement of silicon

Peter H. Linke, Bernt Müller, Horst H. Berger

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 266 KB

english, 1992

104

Pseudo-analytical modelling of stress dependent silicon oxidation

D. Collard, B. Baccus, V. Senez

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 207 KB

english, 1992

105

Simulation of high energy implantation profiles in crystalline silicon

L. Gong, S. Bogen, L. Frey, W. Jung, H. Ryssel

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 224 KB

english, 1992

106

Aluminum thinning onto blanket and etched back tungsten plugs: Simulation of geometrical effects

M.S. Marangon, G. De Santi, A. Marmiroli, R. Pasinetti

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 201 KB

english, 1992

107

A dual sticking coefficient chemical vapor deposition model

Holger Wille, Edmund P. Burte

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 198 KB

english, 1992

108

Process technology optimization using an integrated process and device simulation sequencing system

Rudi Cartuyvels, Richard Booth, Luc Dupas, Kristin De Meyer

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 259 KB

english, 1992

109

Process analysis using RSM and simulation

M. Cecchetti, M. Lissoni, C. Lombardi, A. Marmiroli

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 212 KB

english, 1992

110

The future for multichip modules

Journal:

Microelectronic Engineering

Year:

1992

File:

PDF, 27 KB

1992

111

SiGe heterojunctions: devices and applications

Maurizio Arienzo, James H. Comfort, Emmanuel F. Crabbé, David L. Harame, Subramanian S. Iyer, Vijay P. Kesan, Bernard S. Meyerson, Gary L. Patton, Johannes M.C. Stork, Yuan-Chen Sun

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 616 KB

english, 1992

112

Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique

J.N. Burghartz, J. Warnock, J.D. Cressler, C.L. Stanis, R.C. McIntosh, J.Y.-C. Sun, J.H. Comfort, J.M.C. Stork, K.A. Jenkins, E.F. Crabbé, W. Lee, M. Gilbert

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 325 KB

english, 1992

113

Near-future perspectives for Si and Si1−yGey bipolar transistors

S. Marksteiner, A. Felder, T.F. Meister

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 225 KB

english, 1992

114

High-speed, high-quality WEB NPN transistors with phosphorus emitters

L.K. Nanver, E.J.G. Goudena, H.W. van Zeijl

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 255 KB

english, 1992

115

Improvement of device characteristics by multiple step implants or introducing a C gettering layer

R.C.M. Wijburg, J.R. Liefting, J.S. Custer, H. Wallinga, F.W. Saris

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 280 KB

english, 1992

116

Performance of a CMOS compatible polysilicon bipolar transistor with high energy ion implanted collector

A. Marty, N. Degors, J. Kirtsch, A. Chantre, A. Nouailhat

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 242 KB

english, 1992

117

A 0.8 μm BiCMOS technology for mixed analog-digital applications with complementary bipolar transistors

J. Arndt, P. Conze

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 216 KB

english, 1992

118

Limitations of electrical interconnections in electronic systems

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 61 KB

english, 1992

119

Interconnect technologies for multi-chip modules: high frequency characterization and loss analysis

Joris Peeters, Eric Beyne, Gerold Brändli

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 265 KB

english, 1992

120

Short links modelling in multi-level package

N. Hassaïne, R. Mezui-Mintsa, A. Boudiaf, A. Konczykowska, H. Wang

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 175 KB

english, 1992

121

Thermodynamic analysis of copper CVD using CuCl as precursor

R. Madar, C. Bernard, J. Palleau, J. Torres

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 203 KB

english, 1992

122

Ta/polyimide adhesion durability

A. Callegari, B. Furman, T. Graham, H. Clearfield, W. Price, S. Purushothaman

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 210 KB

english, 1992

123

The influence of current stress on the ageing of Au-Al1%Si(1%Cu) ball-bond contacts studied by SEM and EDX

M. D'Olieslaeger, L. De Schepper, W. De Ceuninck, L. Stals

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 337 KB

english, 1992

124

Measurement of two-dimensional doping profiles

Ravi Subrahmanyan

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 552 KB

english, 1992

125

Lateral spread of high energy P and B ions implanted in silicon along the [100] axis and in random direction

V. Privitera, V. Raineri, E. Rimini

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 252 KB

english, 1992

126

Charge trapping in wafer bonded MOS structures

Anders Jauhiainen, Stefan Bengtsson, Olof Engström

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 259 KB

english, 1992

127

Temperature and field effects on the conduction mechanisms in semi - insulating polycrystalline silicon

S. Lombardo, S.U. Campisano, F. Baroetto

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 255 KB

english, 1992

128

Random telegraph signal noise: A probe for hot-carrier degradation effects in submicrometer MOSFET's?

E. Simoen, B. Dierickx, C. Claeys

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 263 KB

english, 1992

129

Characterization of the ionizing radiation sensitivity of a CCD technology

A. Simone, I. Debusschere, A. Alaerts, C. Claeys

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 288 KB

english, 1992

130

Technology and applications of high-density sensors

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 566 KB

english, 1992

131

A CCD delay line to determine low concentrations of bulk traps in silicon

W.J. Toren, J. Bisschop

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 234 KB

english, 1992

132

A defect-limited noise model for a charge-coupled device pixel

R.D. McGrath, S.F. Clark, P.K. Duane, S. Haque-Ahmed

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 259 KB

english, 1992

133

Pixel structure with logarithmic response for intelligent and flexible imager achitectures

N. Ricquier, B. Dierickx

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 396 KB

english, 1992

134

A 3×3 infrared matrix sensor using PVDF on silicon

P.C.A. Hammes, P.P.L. Regtien

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 231 KB

english, 1992

135

Smart imager for fast and inexpensive mass-spectrometer back-ends

B. Dierickx, D. Geeraert, D. Nevejans

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 281 KB

english, 1992

136

Novel contribution in branch of ultra-fast condensed matter spectroscopic photon counting system

I. Procházka, K. Hamal, B. Sopko, I. Mácha

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 201 KB

english, 1992

137

Shallow junctions, silicide requirements and process technologies for sub 0.5 μm CMOS: Invited review paper

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 440 KB

english, 1992

138

Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing

M. Severi, G. Mattei, L. Dori, P. Maccagnani, G.L. Baldini, G. Pizzochero

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 240 KB

english, 1992

139

Implementation of a TiN cap layer into conventional self-aligned RTP titanium disilicide MOS process

W. Kaplan, S-L. Zhang, H. Norström, M. Östling, A. Lindberg

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 270 KB

english, 1992

140

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

R.J. Schreutelkamp, B. Deweerdt, R. Verbeeck, K. Maex

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 438 KB

english, 1992

141

Comparison of self-aligned silicide technologies for shallow CoSi2-contacts in VLSI-devices

C. Schäffer, D. Depta, L. Niewöhner

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 233 KB

english, 1992

142

Shallow junction formation using MoSi2 as diffusion source

R. Angelucci, M. Impronta, G. Pizzochero, A. Poggi, S. Solmi, R. Canteri

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 251 KB

english, 1992

143

On-wafer high-frequency device characterization

M.C.A.M. Koolen

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 425 KB

english, 1992

144

Transient two-dimensional numerical analysis of the charge-pumping experiment

Predrag Habaš, Otto Heinreichsberger, Siegfried Selberherr

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 312 KB

english, 1992

145

Accurate determination of bandgap narrowing in heavily-doped epitaxial p-type silicon

M.Y. Ghannam, R.P. Mertens

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 224 KB

english, 1992

146

Emitter-base breakdown: Measurement and simulation

W. Bergner, P. Packan, B. Seidl, H. Klose

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 249 KB

english, 1992

147

Explanation of current crowding phenomena induced by impact ionization in advanced Si bipolar transistors by means of electrical measurements and light emission microscopy

Paolo Pavan, Loris Vendrame, Stefano Bigliardi, Arlette Marty, Alain Chantre, Enrico Zanoni

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 334 KB

english, 1992

148

Measuring the drain voltage dependent series resistance in submicron LDD MOSFET's

J.A.M. Otten, F.M. Klaassen

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 157 KB

english, 1992

149

Small geometry effects on the maximum cutoff frequency of bipolar transistors

S. Decoutere, L. Deferm

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 263 KB

english, 1992

150

Low-frequency noise in BJTs and HBTs: Influence of internal series resistances

T.G.M. Kleinpenning, A.J. Holden

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 196 KB

english, 1992

151

A Silicon technology for active high frequency circuits

K.M. Strohm, J. Buechler, J.-F. Luy, F. Schäffler

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 279 KB

english, 1992

152

Polyoxide edge tunneling current reduction by top corner rounding

L. Haspeslagh, G. Vanhorebeek, L. Deferm

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 200 KB

english, 1992

153

Thin high-dielectric TiO2 films prepared by low pressure MOCVD

N. Rausch, E.P. Burte

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 229 KB

english, 1992

154

Laser direct writing of aluminum multilevel interconnects for VLSI applications

L.M. Treiger, A.A. Popov

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 281 KB

english, 1992

155

Integration of vertical/quasivertical DMOS, CMOS and bipolar transistors in a 50 V SIMOX process

J. Weyers, H. Vogt, M. Berger, W. Mach, B. Mütterlein, M. Raab, F. Richter, F. Vogt

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 152 KB

english, 1992

156

Fabrication of submicron microwave bipolar transistors by direct write electron beam lithography

M.N. Webster, A.H. Verbruggen, J. Romijn, H.F.F. Jos, P.M.A. Moors, S. Radelaar

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 349 KB

english, 1992

157

A systematic investigation of N-channel delta-doped MOSFETs grown by M.B.E.

A.G. O'Neill, A.C.G. Wood, P. Phillips, T.E. Whall, E.H.C. Parker, A. Gundlach, S. Taylor

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 266 KB

english, 1992

158

Photon emission from sub-micron p-channel MOSFETs biased at high fields

Luca Selmi, Massimo Lanzoni, Stefano Bigliardi, Enrico Sangiorgi

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 227 KB

english, 1992

159

Effect of electron heating on RTS in deep submicron n-MOSFET's

Z.M. Shi, J.P. Miéville, M. Dutoit

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 173 KB

english, 1992

160

Identification and characterization of the 1/f low-frequency noise in GaAs MESFETs grown on InP substrates

M. Chertouk, A. Chovet, A. Clei

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 196 KB

english, 1992

161

White noise study of JFET's on a new mixed rad-hard technology

E. Delevoye, A. Chovet

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 186 KB

english, 1992

162

Microwave characterization of high Tc superconducting YBaCuO thin films and preliminary device realization

J.C. Carru, F. Mehri, D. Chauvel, Y. Crosnier, K. Deneffe, J.C. Villegier

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 268 KB

english, 1992

163

Accurate modeling of electro-thermal effects in silicon devices

A. Pierantoni, P. Ciampolini, G. Baccarani

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 230 KB

english, 1992

164

Analysis of transient behaviour of floating gate EEPROMs

A. Concannon, S. Keeney, A. Mathewson, R. Bez, C. Lombardi

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 230 KB

english, 1992

165

Accurate analysis of emitter ballasting in HBT power transistors

R. Mezui-Mintsa, N. Hassaïne, M. Riet, B. Villeforceix, A. Konczykowska, S. Vuye, H. Wang

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 216 KB

english, 1992

166

Influence of short channel effects on microwave performances of AlGaAs/InGaAs HEMTs using Monte Carlo simulation

P. Dollfus, C. Bru, S. Galdin, P. Hesto

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 270 KB

english, 1992

167

Correlation between mobility degradation and threshold-voltage behavior of subhalf-micron MOSFETs

H.-J. Wildau, H. Bernt, D. Friedrich, W. Seifert, P. Staudt-Fischbach, H.G. Wagemann, W. Windbracke

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 248 KB

english, 1992

168

The efficient simulation of point diffusion by an adaptive multigrid method

D. Pantić, S. Mijalković, N. Stojadinović

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 251 KB

english, 1992

169

Trends in silicon-on-insulator technology

Jean-Pierre Colinge

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 509 KB

english, 1992

170

Physics and performances of accumulation-mode SOI p-MOSFET's from low (77 K) to high (150–320°C) temperatures

D. Flandre, A. Terao, T. Loo, J.-P. Colinge

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 234 KB

english, 1992

171

Investigation of the influence of the film thickness in accumulation-mode fully-depleted SIMOX MOSFET's

O. Faynot, A.J. Auberton-Hervé, S. Cristoloveanu

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 235 KB

english, 1992

172

Analysis of the latch phenomenon in thin film SOI MOSFET's as a function of temperature

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 214 KB

english, 1992

173

Characteristics of nMOS/GAA (Gate-All-Around) transistors near threshold

P. Francis, A. Terao, D. Flandre, F. Van de Wiele

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 268 KB

english, 1992

174

Analysis of geometric charge-pumping components in a thin-film SOI device

Otto Heinreichsberger, Predrag Habaš, Siegfried Selberherr

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 279 KB

english, 1992

175

Correlation between spectroscopic reflectrometry and electrical measurements of SIMOX SOI film thickness

P. Smeys, U. Magnusson, J.P. Colinge

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 232 KB

english, 1992

176

SOI material properties determined by electrical characterization

P. Rai-Choudhury, R.J. Hillard, J.M. Heddleson, S.R. Weinzierl, T. Abe, P. Karulkar, M. Pawlik

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 258 KB

english, 1992

177

A survey of MOS device physics for low temperature electronics

G. Ghibaudo, F. Balestra, A. Emrani

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 560 KB

english, 1992

178

SiGe-base bipolar transistors for cryogenic BiCMOS applications

John D. Cressler

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 509 KB

english, 1992

179

Base profile tail effects on the low temperature operation of silicon bipolar transistors

N. Degors, A. Chantre, A. Nouailhat

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 226 KB

english, 1992

180

Electron heating and quantum transport in deep submicrometer n-MOSFET's at low temperatures and high magnetic fields

J.P. Miéville, T. Ouisse, S. Cristoloveanu, N. Revil, Z.M. Shi, M. Dutoit

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 225 KB

english, 1992

181

Low temperature behaviour of submicron accumulation mode p-channel SOI MOSFETs

A.L.P. Rotondaro, U. Magnusson, E. Simoen, C. Claeys, J-P. Colinge

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 228 KB

english, 1992

182

Cryogenic behavior of Ultrashort gate AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs HEMT's

P. Crozat, D. Bouchon, A. de Lustrac, F. Aniel, Y. Jin, R. Adde, G. Vernet, Y. Jin, B. Etienne, H. Launois, M. Van Hove, W. de Raedt, M. Van Rossum

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 281 KB

english, 1992

183

Experimental determination of selfheating in silicon resistors operated at cryogenic temperatures

Edmundo A. Gutiérrez-D., Ludo Deferm, Stefaan Decoutere, Gilbert Declerck

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 273 KB

english, 1992

184

New developments in quantum heterostructures

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 517 KB

english, 1992

185

Improved triple resonant tunneling diodes using InxGa1−xAs/GaAs/AlAs strained layers

D. Lippens, J. Nagle, B. Grimbert, V. Sadaune, E. Lheurette, B. Vinter, P. Tilmant, M. François

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 275 KB

english, 1992

186

Sequential analysis of resonant tunneling diodes

J. Genoe, C. Van Hoof, G. Borghs

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 214 KB

english, 1992

187

Generation of four negative differential resistance regions using two resonant tunneling diodes

K. Fobelets, J. Genoe, R. Vounckx, G. Borghs

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 275 KB

english, 1992

188

Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE

R. Schwedler, B. Gallman, K. Wolter, A. Kohl, K. Leo, H. Kurz, S. Juillaguet, J. Camassel, J.P. Laurenti, F.H. Baumann

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 216 KB

english, 1992

189

Electro-optic characterization of InGaAs/InP MQW p-i-n modulator structures

R. Schwedler, H. Mikkelsen, R. Kersting, D. Laschet, A. Kohl, K. Wolter, K. Leo, H. Kurz

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 205 KB

english, 1992

190

Self-consistent modelling of charge storage effects in resonant tunnel diodes

R. Redhammer, D.W.E. Allsopp

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 272 KB

english, 1992

191

High-speed integrated quantum well self-electrooptic effect device

V.I. Tolstikhin

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 223 KB

english, 1992

192

Quantum electron and optoelectronic devices (invited paper)

Federico Capasso

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 510 KB

english, 1992

193

Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation

A. Gnudi, D. Ventura, G. Baccarani, F. Odeh

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 666 KB

english, 1992

194

Author index

Journal:

Microelectronic Engineering

Year:

1992

File:

PDF, 244 KB

1992

195

Errata

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 47 KB

english, 1992

196

The influence of MBE-layer design on the high frequency performance of Si/SiGe HBTs

A. Gruhle, H. Kibbel, E. Kasper

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 277 KB

english, 1992

197

A modular BICMOS technology including 85V DMOS devices for analogue/digital ASIC applications

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 244 KB

english, 1992