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Characterisation of heterojunction bipolar transistors incorporating Si/Si1−xGex epitaxial double layers with n+ emitter implants
DJ Robbins, WY Leong, JL Glasper, AJ Pidduck, R Jackson, IRC Post, ZA Shafi, P AshburnVolume:
19
Year:
1992
Language:
english
Pages:
4
DOI:
10.1016/0167-9317(92)90472-4
File:
PDF, 230 KB
english, 1992