A new hot-carrier induced degradation mode under low gate...

Microelectronic Engineering 1993 Vol. 22; Iss. 1-4

A new hot-carrier induced degradation mode under low gate and drain bias stresses in n-channel MOSFETs

Masakazu Shimaya, Shigeo Ogawa, Noboru Shiono
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Volume:
22
Year:
1993
Language:
english
Pages:
4
DOI:
10.1016/0167-9317(93)90176-6
File:
PDF, 349 KB
english, 1993
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