Volume 22; Issue 1-4

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Microelectronic Engineering
Volume 22; Issue 1-4

Microelectronic Engineering

Volume 22; Issue 1-4

1

Editorial Board

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 84 KB

english, 1993

2

Preface

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 71 KB

english, 1993

3

Contents

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 369 KB

english, 1993

4

Ultra-thin gate oxide growth on hydrogen-terminated silicon surfaces

M. Hirose, M. Hiroshima, T. Yasaka, M. Takakura, S. Miyazaki

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 559 KB

english, 1993

5

Oxide growth in cluster tools

E.H.A. Granneman

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 692 KB

english, 1993

6

Cleaning technology for improved gate oxide integrity

M. Meuris, S. Verhaverbeke, P.W. Mertens, H.F. Schmidt, M.M. Heyns, M. Kubota, A. Philipossian, K. Dillenbeck, D. Gräf, A. Schnegg, R. de Blank

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 655 KB

english, 1993

7

Carbon impurities at a Si-SiO2 interface

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 516 KB

english, 1993

8

Modellization of the silicon rapid thermal oxidation in the initial stages according to the silicon fragments model

J.-J. Ganem, S. Rigo, I. Trimaille

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 383 KB

english, 1993

9

Development of the structure of thin SiO2 films during thermal growth on Si substrate

I.P. Lisovskii, V.G. Litovchenko, V.V. Khatko

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 365 KB

english, 1993

10

Determination of Si/SiO2 interfacial roughness using weak localization

W.R. Anderson, D.R. Lombardi, P.H. Mitev, T.P. Ma, R.G. Wheeler

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 386 KB

english, 1993

11

Optimisation of furnace oxidation of Si with respect to negative bias stress instability

V. Nayar, R. Jackson, M.L. Filleul, K.M. Brunson, M.J. Uren, A.M. Hodge

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 336 KB

english, 1993

12

Ferroelectrics and high permittivity dielectrics for memory applications

P.K. Larsen, G.A.C.M. Spierings, R. Cuppens, G.J.M. Dormans

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 695 KB

english, 1993

13

Tunnel oxides grown by rapid thermal oxidation

M. Depas, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 317 KB

english, 1993

14

Study of hydrogen incorporation in MOS-structures after various process steps using nuclear reaction analysis (NRA)

J. Krauser, F. Wulf, M.A. Briere, J. Steiger, D. Bräunig

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 318 KB

english, 1993

15

A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices

L. Manchanda, G.R. Weber, Y.O. Kim, L.C. Feldman, N. Moryia, B.E. Weir, R.C. Kistler, M.L. Green, D. Brasen

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 279 KB

english, 1993

16

Nitridation of thin SiO2 films induced by low energy (3–100 eV) electron bombardment

V. Garcia, A. Glachant, J.C. Bureau, B. Balland, C. Plossu, J.C. Dupuy, A. Straboni

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 275 KB

english, 1993

17

Nitrogen saturation behaviour near the SiO2/Si-interface during N2O-rapid thermal oxidation

G. Weidner, R. Kurps, K. Blum, D. Krüger

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 354 KB

english, 1993

18

High-resolution SIMS profiling of nitrogen in ultra-thin SiO2 films nitrided by RTP in NH3 and N2O

J. Mia, D. Bouvet, P. Letourneau, N. Xanthopoulos, H.J. Mathieu, M. Dutoit, C. Dubois, J.C. Dupuy

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 296 KB

english, 1993

19

Lightly nitrided gate oxides for 0.25 μm CMOS

H.G. Pomp, A.E.T. Kuiper, H. Lifka, A.H. Montree, P.H. Woerlee

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 356 KB

english, 1993

20

Electrical characterization versus temperature of SI MOS transistors with plasma nitrided gate oxide

A. Emrani, G. Ghibaudo, F. Balestra, B. Piot, V. Thirion, A. Straboni

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 281 KB

english, 1993

21

Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine

V.V. Afanas'ev, M. Depas, J.M.M. de Nijs, P. Balk

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 392 KB

english, 1993

22

Interface properties in fluorinated (100) and (111)Si/SiO2 MOSFETs

A. Balasiński, M.H. Tsai, L. Vishnubhotla, T.P. Ma, H.H. Tseng, P.J. Tobin

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 294 KB

english, 1993

23

Alkyl-trichlorosilane monolayer as ultra-thin insulating film for silicon MIS devices

D. Vuillaume, P. Fontaine, J. Collet, D. Deresmes, M. Garet, F. Rondelez

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 317 KB

english, 1993

24

Compound semiconductor/insulator device interfaces - Present status and requirements

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 649 KB

english, 1993

25

Discrete current fluctuations in InP MIS structures due to defects created by breakdown degradation in InP native oxide

D. Pogany, S. Ababou, G. Guillot, P. Louis

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 325 KB

english, 1993

26

Electron trapping properties of Ge-implanted SiO2

J.M.M. de Nijs, P. Balk

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 336 KB

english, 1993

27

Electron spin resonance and instabilities in metal insulator semiconductor systems

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 902 KB

english, 1993

28

New defect in as-grown thermal SiO2 inherent to the growth process

A. Stesmans, F. Scheerlinck

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 346 KB

english, 1993

29

An improved theory of spin dependent recombination : application to the Pb center at the Si-SiO2 interface

M. Lannoo, D. Vuillaume, D. Deresmes, D. Stiévenard

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 311 KB

english, 1993

30

Identification and properties of Pb-like centers in photoluminescent porous silicon

F.C. Rong, J.F. Harvey, E.H. Poindexter, G.J. Gerardi

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 367 KB

english, 1993

31

Quantum transport in nanostructured silicon MOSFETs

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 950 KB

english, 1993

32

Random telegraph signals from liquid helium to room temperature

D.H. Cobden, M.J. Uren

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 694 KB

english, 1993

33

Coulomb energy of trapping in MOS interface states

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 492 KB

english, 1993

34

Low frequency noise and random telegraph signals in 0.35μm silicon CMOS devices

O. Roux-dit-Buisson, G. Ghibaudo, J. Brini, C. Lohse, G. Guégan

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 259 KB

english, 1993

35

Coulomb free energy for single-electron interface trapping in sub-μm MOSFETs

H.H. Mueller, D. Wörle, M. Schulz

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 310 KB

english, 1993

36

Alternative random telegraph signal mechanisms in silicon-on-insulator MOS transistors

E. Simoen, C. Claeys

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 307 KB

english, 1993

37

Microscopic mechanisms of interface state generation by electrical stress

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 484 KB

english, 1993

38

Generation and transformation of interface traps in MOS structures

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 385 KB

english, 1993

39

The nature of interface states generated by high field injection

Dominique Vuillaume

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 484 KB

english, 1993

40

Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface

E. Cartier, D.J. DiMaria

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 336 KB

english, 1993

41

Hot electrons in silicon dioxide and nitride films

D.G. Esaev, S.P. Sinitsa

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 349 KB

english, 1993

42

Radiation induced interface states and ESR evidence for room temperature interactions between molecular hydrogen and silicon dangling bonds in amorphous SiO2 Films on Si

J.F. Conley, P.M. Lenahan

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 400 KB

english, 1993

43

Radiation and high field induced interface state generation in MOS structures with modified nitrided oxide

J. Shappir, T. Roter, J. Levinson

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 242 KB

english, 1993

44

Annealing of irradiation induced positive oxide charges in SiO2/Si-MOS structures as described by hydrogen reactions

Y. Wang, W.R. Fahrner, D. Bräunig

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 325 KB

english, 1993

45

New model of a common origin for trapped holes and anomalous positive charge in MOS capacitors

Y. Roh, L. Trombetta, J. Stathis

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 359 KB

english, 1993

46

Charge exchange mechanisms of slow states in Si/SiO2

K.G. Druijf, J.M.M. de Nijs, E. van der Drift, E.H.A. Granneman, P. Balk

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 378 KB

english, 1993

47

Annealing and charging of slow and fast states in metal-tunnel oxide-silicon diodes measured using capacitance-voltage and current-voltage techniques

M.O. Andersson, P. Lundgren, O. Engström, K.R. Farmer

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 412 KB

english, 1993

48

Electrical studies of the reactions between ethanol vapours and inversion mode Si-thin SiO2 structures

E. Atanassova, T. Dimitrova

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 325 KB

english, 1993

49

Nitrided gate-oxide CMOS technology for improved hot-carrier reliability

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 642 KB

english, 1993

50

Hot carrier stress effects in p-MOSFETs: physical effects relevant for circuit operation

W. Weber, M. Brox, A.v. Schwerin, R. Thewes

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 672 KB

english, 1993

51

Substrate hot electron injection modelling based on lucky drift theory

X.-J. Yuan, J.S. Marsland, W. Eccleston

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 307 KB

english, 1993

52

Effects of hydrogen annealing after channel hot carrier stress

N.S. Saks, R.B. Klein

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 370 KB

english, 1993

53

Oxide degradation study during substrate hot electron injection

S.P. Zhao, S. Taylor, W. Eccleston, K.J. Barlow

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 312 KB

english, 1993

54

High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29Si hyperfine spectra

J.W. Gabrys, P.M. Lenahan, W. Weber

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 327 KB

english, 1993

55

Hot carrier dependent radiation effects: New reliability issue for thin oxide devices

N.C. Das, V. Nathan

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 347 KB

english, 1993

56

A unified explanation for gate current in n-MOS devices based on hot electrons and the Poole-Frenkel effect

W.R. Harrell, J. Frey

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 322 KB

english, 1993

57

Low frequency noise in short-channel MOSFET's degraded by Fowler-Nordheim and Hot-Carrier Injection

Jen-Tai Hsu, Xiaoyu Li, C.R. Viswanathan

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 308 KB

english, 1993

58

A new hot-carrier induced degradation mode under low gate and drain bias stresses in n-channel MOSFETs

Masakazu Shimaya, Shigeo Ogawa, Noboru Shiono

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 349 KB

english, 1993

59

Investigation of hot-carrier induced degradation in 0.1μm channel length n-MOSFET's

N. Revil, J.P. Miéville, S. Cristoloveanu, M. Dutoit, P. Mortini

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 295 KB

english, 1993

60

Wafer bonding: SOI, generalized bonding, and new structures

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 710 KB

english, 1993

61

Microstructure of SIMOX buried oxide, mechanisms of defect formation and related reliability issues

J.Stoemenos Aristotle

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 679 KB

english, 1993

62

A comparison of SOI technologies and materials, and prospective fields of application

H. Ryssel, R. Schork, N.X. Chen

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 608 KB

english, 1993

63

Modeling and simulation of thin SOI MOSFET's: Concepts, tools, and results

Jerry G. Fossum

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 640 KB

english, 1993

64

Typical effects in SOI MOSFETS and related electrical and thermal characterisation

W. Eccleston, S. Hall

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 619 KB

english, 1993

65

Special SOI-based devices

A.J. Auberton-Hervé

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 581 KB

english, 1993

66

Plasma thinning of silicon-on-insulator bonded wafers

G.J. Gardopee, P.B. Mumola, P.J. Clapis, C.B. Zarowin, L.D. Bollinger, A.M. Ledger

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 345 KB

english, 1993

67

Manufacturing technology for 200mm SIMOX Wafers

M. Guerra, B. Cordts, T. Smick, R. Dolan, W. Krull, G. Ryding, M. Alles, M. Anc

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 301 KB

english, 1993

68

Structural, optical and electrical properties of SIPOS passivation layers

W. Füssel, W. Henrion, R. Scholz

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 468 KB

english, 1993

69

Electrical characterisation of oxidised porous silicon

Z.Y. Wu, S. Hall, W. Eccleston, J.M. Keen

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 363 KB

english, 1993

70

Silicon interstitial reactions with thermally grown silicon dioxide

C. Tsamis, D. Tsoukalas, N. Guillemot

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 283 KB

english, 1993

71

Silicon clusters as photoactive traps in buried oxide layers of SIMOX structures

S.I. Fedoseenko, V.K. Adamchuk, V.V. Afanas'ev

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 374 KB

english, 1993

72

Hydrogen induced positive charging of buried SiO2

K. Vanheusden, A. Stesmans

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 319 KB

english, 1993

73

Hysteresis effects in thin film SOI transistors

G.A. Armstrong, W.D. French

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 327 KB

english, 1993

74

Very high current gain enhancement by substrate biasing of lateral bipolar transistors on thin SOI

Bengt Edholm, Jörgen Olsson, Anders Söderbärg

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 277 KB

english, 1993

75

Low frequency noise in silicon on insulator MOSFET's: Experimental and numerical simulation results

J. Jomaah, F. Balestra, G. Ghibaudo

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 353 KB

english, 1993

76

Radiation-induced defect centers in bonded and etchback SOI materials

W.L. Warren, J.R. Schwank, M.R. Shaneyfelt, D.M. Fleetwood, P.S. Winokur, W.P. Maszara, J.B. McKitterick

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 332 KB

english, 1993

77

A systematic investigation of radiation effects in MOS/SIMOX structures

A.M. Ionescu, S. Cristoloveanu, A. Chovet, P. Jarron, E. Heijne, F. Faccio, G. Rossi

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 320 KB

english, 1993

78

An improved analytical description of thin-film SOI MOSFET in the above-threshold region.

M. Jurczak, A. Jakubowski

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 244 KB

english, 1993

79

A study of high field conduction and electron trapping in buried oxides produced by SIMOX technology

S.P. Wainwright, C. Ngwa, S. Hall, W. Eccleston

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 364 KB

english, 1993

80

Mechanisms of hot-carrier induced degradation of SOI (SIMOX) MOSFET's

A. Zaleski, D.E. Ioannou, G.J. Campisi, H.L. Hughes

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 264 KB

english, 1993

81

Hot-carrier degradation in ultra-thin fully-depleted accumulation-mode SIMOX n-MOSFET's

O. Faynot, S. Cristoloveanu, A.-J. Auberton-Hervé, G. Reimbold

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 322 KB

english, 1993

82

Author index volume 22

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 597 KB

english, 1993

83

Transition from MOS to Schottky-contact behaviour in Yb-SiO2-Si tunneling junctions with extremely thin SiO2 layer

P. Bauernschmitt, J. Lindolf, U. Kunze

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 319 KB

english, 1993

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