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Bismuth on GaAs(110): Characterisation of growth mode and Schottky barrier formation at low and room temperature
N. Esser, M. Hünermann, U. Resch, D. Spaltmann, J. Geurts, D.R.T. Zahn, W. Richter, R.H. WilliamsVolume:
41-42
Year:
1989
Language:
english
Pages:
5
DOI:
10.1016/0169-4332(89)90051-2
File:
PDF, 429 KB
english, 1989